In this study, films of gallium oxide (Ga 2 O 3) were prepared through remote plasma atomic
layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical …

Mg and Si as the typical dopants for p-and n-type gallium nitride (GaN), respectively, are
widely used in GaN-based photoelectric devices. The thermal transport properties play a key …

Recent years, organic-inorganic hybrid perovskites (OIHPs) have been widely used in
applications, such as solar cells, lasers, light-emission diodes, and photodetectors due to …

Abstract Effects of post-deposition annealing at 400–1000° C in ammonia (NH 3) gas
ambient towards physical and electrical characteristics of metal-organic decomposition …

Ternary based aluminium doped zirconium oxide (Al x Zr y O z) was grown on silicon (Si)
substrate after post-sputter oxidation of the Al single bondZr film at different temperatures …

Aluminum is an important component in many consumer goods, such as automobiles. Ore
refinement and the production of end products incurs a significant energy cost. An …

A systematic investigation was carried out by incorporating an ultrathin aluminum oxide
(Al2O3) as an interlayer between yttrium oxide (Y2O3) passivation layer and GaN substrate …

Co-sputtering and post-sputter oxidation were incorporated as a two-step growth route for
the formation of ternary aluminium doped zirconium oxide (Al x Zr y O z) films on silicon (Si) …

The formation of nano-dendritic like structure and nano-spikes in AlInGaN films via
ultraviolet-assisted photoelectrochemical (PEC) etching at different current densities (5, 20 …

In this work, systematic investigation was performed to study the effects of post-deposition
annealing time (15, 30 and 45 minutes) at 1000° C in oxygen ambient on electrical …