Solid-state defects acting as single photon sources and quantum bits are leading
contenders in quantum technologies. Despite great efforts, not all the properties and …

Silicon carbide is a hard, semiconducting material presenting many polytypes, whose
behavior under extreme conditions of pressure and temperature has attracted large interest …

The Allen-Heine-Cardona theory allows us to calculate phonon-induced electron self-
energies from first principles without resorting to the adiabatic approximation. However, this …

Silicon carbide has emerged as an optimal semiconducting support for graphene growth. In
previous studies, the formation of an interfacial graphene-like buffer layer covalently bonded …

In this review paper, we list the basic properties of the most relevant point defect quantum
bits or quantum bit candidates that have been harnessed to realize single photon sources …

With the increasing demand for high power density, and to meet extreme working conditions,
research has been focused on investigating the performance of power electronics devices at …

In density functional theory (DFT)-based total energy studies, the van der Waals (vdW) and
zero-point vibrational energy (ZPVE) correction terms are included to obtain energy …

Silicon carbide, a semiconducting material, has gained importance in the fields of ceramics,
electronics, and renewable energy due to its remarkable hardness and resistance. In this …

Divacancy in its neutral charge state (VCV Si 0) in 4H silicon carbide (SiC) is a leading
quantum bit (qubit) contender. Owing to the lattice structure of 4H SiC, four different VCV Si …

Point defects may introduce defect levels into the fundamental band gap of the host
semiconductors that alter the electrical properties of the material. As a consequence, the in …