Lasing in strained germanium microbridges

FT Armand Pilon, A Lyasota, YM Niquet… - Nature …, 2019 - nature.com
Germanium has long been regarded as a promising laser material for silicon based opto-
electronics. It is CMOS-compatible and has a favourable band structure, which can be tuned …

Generalized dissipation dilution in strained mechanical resonators

SA Fedorov, NJ Engelsen, AH Ghadimi, MJ Bereyhi… - Physical Review B, 2019 - APS
Mechanical resonators with high quality factors are widely used in precision experiments,
ranging from gravitational wave detection and force sensing to quantum optomechanics …

Lasing in group-IV materials

V Reboud, D Buca, H Sigg, JM Hartmann… - Silicon Photonics IV …, 2021 - Springer
Silicon photonics in the near-IR, up to 1.6 µm, is already one of key technologies in optical
data communications, particularly short range. It also is being prospected for applications in …

Geometric tuning of stress in predisplaced silicon nitride resonators

D Hoch, X Yao, M Poot - Nano Letters, 2022 - ACS Publications
We introduce a novel method to geometrically tune the tension in prestrained resonators by
making Si3N4 strings with a designed predisplacement. This enables us, for example, to …

Monolithic integrated emitting-detecting configuration based on strained Ge microbridge

S Qin, J Sun, J Jiang, Y Zhang, M Cheng, L Yu… - …, 2021 - degruyter.com
The strain technology is accelerating the progress on the CMOS compatible Ge-on-Si laser
source. Here, we report a monolithically integrated microbridge-based emitting-detecting …

Investigation of lasing in highly strained germanium at the crossover to direct band gap

FT Armand Pilon, YM Niquet, J Chretien, N Pauc… - Physical Review …, 2022 - APS
Efficient and cost-effective Si-compatible lasers are a longstanding wish of the
optoelectronic industry. In principle, there are two options. For many applications, lasers …

Strain engineering for a gigahertz mechanical resonator based on two-dimensional atomic-layer phononic crystals

BY Li, ZH Qin, SN Liang, HY Chen, SY Yu, YF Chen - Physical Review B, 2024 - APS
Achieving both ultrahigh quality Q and high frequency simultaneously in mechanical
resonators is challenging due to the positive correlation between loss and frequency …

[PDF][PDF] Mechanical resonators with high dissipation dilution in precision and quantum measurements

S Fedorov - 2021 - infoscience.epfl.ch
Position measurements of mechanical oscillators underpin experiments spanning from
applied nanoscale sensing to endeavors aiming to resolve open fundamental problems of …

Non-linear Raman shift-stress behavior in top-down fabricated highly strained silicon nanowires

LB Spejo, JL Arrieta-Concha… - Journal of Applied …, 2020 - pubs.aip.org
Strain engineering is a key technology to continue Moore's law with silicon or any other
foreseen semiconductor in very large scale integration. The characterization of strain in …

Semiconductor structure comprising a tensilely stressed suspended membrane including an optical cavity

V Reboud, S Boutami - US Patent 10,411,434, 2019 - Google Patents
The invention relates to a semiconductor structure, includ ing: a semiconductor layer,
including a membrane suspended above a carrier layer, the suspended membrane being …