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[HTML][HTML] Reliability, applications and challenges of GaN HEMT technology for modern power devices: A review
A new generation of high-efficiency power devices is being developed using wide bandgap
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Among the wide band gap (WBG) semiconductors, silicon carbide (4H-SiC) and gallium
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
Review of technology for normally-off HEMTs with p-GaN gate
Owing to the high carrier density and high electron mobility of the two dimensional electron
gas (2DEG), high electron mobility transistors (HEMTs) based on gallium nitride (GaN) are …
gas (2DEG), high electron mobility transistors (HEMTs) based on gallium nitride (GaN) are …
[HTML][HTML] Selective do** in silicon carbide power devices
Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently
employed for the fabrication of high-efficiency power electronic devices, such as diodes and …
employed for the fabrication of high-efficiency power electronic devices, such as diodes and …
Ion implantation do** in silicon carbide and gallium nitride electronic devices
Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are
excellent materials for the next generation of high-power and high-frequency electronic …
excellent materials for the next generation of high-power and high-frequency electronic …
Physical unclonable anticounterfeiting electrodes enabled by spontaneously formed plasmonic core–shell nanoparticles for traceable electronics
Counterfeit electronics are a growing problem for the electronic information industry
worldwide, so develo** unbreakable security tags is crucial to ensure the trustworthiness …
worldwide, so develo** unbreakable security tags is crucial to ensure the trustworthiness …
The fundamental surface science of wurtzite gallium nitride
A review is presented that covers the experimental and theoretical literature relating to the
preparation, electronic structure and chemical and physical properties of the surfaces of the …
preparation, electronic structure and chemical and physical properties of the surfaces of the …
Superhigh out-of-plane piezoelectricity, low thermal conductivity and photocatalytic abilities in ultrathin 2D van der Waals heterostructures of boron monophosphide …
A stable 2D van der Waals (vdW) heterobilayer, constituted by boron monophosphide (BP)
and Gallium Nitride (GaN) monolayers, has been explored for different kinds of energy …
and Gallium Nitride (GaN) monolayers, has been explored for different kinds of energy …
Tunneling current through non-alloyed metal/heavily-doped SiC interfaces
In this paper, tunneling phenomena at metal/heavily-doped SiC Schottky (non-sintered)
interfaces are reviewed, and a design guideline for low-resistance non-alloyed SiC ohmic …
interfaces are reviewed, and a design guideline for low-resistance non-alloyed SiC ohmic …
[HTML][HTML] Effect of sintering conditions on the mechanical strength of Cu-sintered joints for high-power applications
In this study, the feasibility of low-cost Cu-sintering technology for power electronics
packaging and the effect of sintering conditions on the bonding strength of the Cu-sintered …
packaging and the effect of sintering conditions on the bonding strength of the Cu-sintered …