Colloidal silicon quantum dots: from preparation to the modification of self-assembled monolayers (SAMs) for bio-applications
Concerns over possible toxicities of conventional metal-containing quantum dots have
inspired growing research interests in colloidal silicon nanocrystals (SiNCs), or silicon …
inspired growing research interests in colloidal silicon nanocrystals (SiNCs), or silicon …
Effect of martensitic transformation and magnetic field on transport properties of Ni-Mn-Ga and Ni-Fe-Ga Heusler alloys
We study the magnetic-field influence on the martensitic transformation temperatures and
the accompanying anomaly in the resistivity by extensive measurements of the temperature …
the accompanying anomaly in the resistivity by extensive measurements of the temperature …
Room temperature emission at 1.6 μm from InGaAs quantum dots capped with GaAsSb
Room temperature photoluminescence at 1.6 μ m is demonstrated from InGaAs quantum
dots capped with an 8 nm GaAsSb quantum well. Results obtained from various sample …
dots capped with an 8 nm GaAsSb quantum well. Results obtained from various sample …
GaAsSb-capped InAs quantum dots: from enlarged quantum dot height to alloy fluctuations
JM Ulloa, R Gargallo-Caballero, M Bozkurt… - Physical Review B …, 2010 - APS
The Sb-induced changes in the optical properties of GaAsSb-capped InAs/GaAs quantum
dots (QDs) are shown to be strongly correlated with structural changes. The observed …
dots (QDs) are shown to be strongly correlated with structural changes. The observed …
Room-temperature 1.6 μm light emission from InAs∕ GaAs quantum dots with a thin GaAsSb cap layer
HY Liu, MJ Steer, TJ Badcock, DJ Mowbray… - Journal of applied …, 2006 - pubs.aip.org
It is demonstrated that the emission of InAs quantum dots (QDs) capped with GaAsSb can be
extended from 1.28 to 1.6 μ m by increasing the Sb composition of the cap** layer from …
extended from 1.28 to 1.6 μ m by increasing the Sb composition of the cap** layer from …
Optical transitions in type-II InAs∕ GaAs quantum dots covered by a GaAsSb strain-reducing layer
The excitation power dependence of the ground and excited state transitions in type-II In As-
Ga As 0.78 Sb 0.22 quantum dot structure has been studied. Both transitions exhibit a strong …
Ga As 0.78 Sb 0.22 quantum dot structure has been studied. Both transitions exhibit a strong …
Metastability and magnetic memory effect in
Magnetostructural instability in the ferromagnetic shape memory alloy of composition Ni 2
Mn 1.4 Sn 0.6 is investigated by transport and magnetic measurements. Large negative …
Mn 1.4 Sn 0.6 is investigated by transport and magnetic measurements. Large negative …
Suppression of InAs∕ GaAs quantum dot decomposition by the incorporation of a GaAsSb cap** layer
The influence of a GaAsSb cap** layer on the structural properties of self-assembled
InAs∕ GaAs quantum dots (QDs) is studied on the atomic scale by cross-sectional scanning …
InAs∕ GaAs quantum dots (QDs) is studied on the atomic scale by cross-sectional scanning …
Excitonic structure and pum** power dependent emission blue-shift of type-II quantum dots
In this work we study theoretically and experimentally the multi-particle structure of the so-
called type-II quantum dots with spatially separated electrons and holes. Our calculations …
called type-II quantum dots with spatially separated electrons and holes. Our calculations …
Antimony composition impact on band alignment in InAs/GaAsSb quantum dots
I Saïdi, K Boujdaria, C Testelin - Solid State Communications, 2024 - Elsevier
We present a theoretical study of the electronic and excitonic states in InAs/GaAsSb
quantum dots. We first center our study on the dependence of the antimony composition in …
quantum dots. We first center our study on the dependence of the antimony composition in …