Dawn of nitride ferroelectric semiconductors: from materials to devices
III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …
been extensively investigated in the past decades. New functionalities, such as …
Patterning of Sc0.3Al0.7N Film for Piezoelectric MEMS Devices
ZJ Quek, Y Lim, M Li, H Lin… - 2023 IEEE International …, 2023 - ieeexplore.ieee.org
Piezoelectric coefficient in Sc x Al 1-x N was reported to increase as scandium-do** x
increases up to 43%. However, the patterning of Sc 0.3 Al 0.7 N film for the fabrication of …
increases up to 43%. However, the patterning of Sc 0.3 Al 0.7 N film for the fabrication of …
Exceptionally Low Optical Absorption in Aluminum Nitride Thin Films Deposited by Magnetron Sputtering
AlN addresses issues with traditional thin-film waveguides with its wide-bandgap and broad
transparency window. This work demonstrates sputter-deposited AlN thin flms with ultra-low …
transparency window. This work demonstrates sputter-deposited AlN thin flms with ultra-low …
Double-tip Scandium Aluminum Nitride Edge Couplers at 1550 nm Wavelength
Double-tip scandium aluminum nitride (Al 1-x Sc x N) edge couplers with three different Sc
concentrations (x= 0, 0.09, 0.23) working at 1550 nm wavelength are designed. The …
concentrations (x= 0, 0.09, 0.23) working at 1550 nm wavelength are designed. The …
[CITATION][C] 基于新型掺钪氮化铝的级联马赫-曾德尔结构 (解) 复用器
陈心逸， 胡超， 郑少南， 赵兴岩， 钟其泽… - Semiconductor …, 2023 - 半导体光电编辑部