Graphene and two-dimensional materials for silicon technology
The development of silicon semiconductor technology has produced breakthroughs in
electronics—from the microprocessor in the late 1960s to early 1970s, to automation …
electronics—from the microprocessor in the late 1960s to early 1970s, to automation …
The future transistors
The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
2D fin field-effect transistors integrated with epitaxial high-k gate oxide
C Tan, M Yu, J Tang, X Gao, Y Yin, Y Zhang, J Wang… - Nature, 2023 - nature.com
Precise integration of two-dimensional (2D) semiconductors and high-dielectric-constant (k)
gate oxides into three-dimensional (3D) vertical-architecture arrays holds promise for …
gate oxides into three-dimensional (3D) vertical-architecture arrays holds promise for …
Qubits made by advanced semiconductor manufacturing
Full-scale quantum computers require the integration of millions of qubits, and the potential
of using industrial semiconductor manufacturing to meet this need has driven the …
of using industrial semiconductor manufacturing to meet this need has driven the …
Scaling aligned carbon nanotube transistors to a sub-10 nm node
Aligned semiconducting carbon nanotubes are a potential alternative to silicon in the
creation of scaled field-effect transistors (FETs) due to their easy miniaturization and high …
creation of scaled field-effect transistors (FETs) due to their easy miniaturization and high …
Introduction to spin wave computing
This paper provides a tutorial overview over recent vigorous efforts to develop computing
systems based on spin waves instead of charges and voltages. Spin-wave computing can …
systems based on spin waves instead of charges and voltages. Spin-wave computing can …
Sub-10 nm fabrication: methods and applications
Reliable fabrication of micro/nanostructures with sub-10 nm features is of great significance
for advancing nanoscience and nanotechnology. While the capability of current …
for advancing nanoscience and nanotechnology. While the capability of current …
A 14nm logic technology featuring 2nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm2 SRAM cell size
S Natarajan, M Agostinelli, S Akbar… - 2014 IEEE …, 2014 - ieeexplore.ieee.org
A 14nm logic technology using 2 nd-generation FinFET transistors with a novel subfin
do** technique, self-aligned double patterning (SADP) for critical patterning layers, and …
do** technique, self-aligned double patterning (SADP) for critical patterning layers, and …
Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices
Two-dimensional semiconductors could be used as a channel material in low-power
transistors, but the deposition of high-quality, ultrathin high-κ dielectrics on such materials …
transistors, but the deposition of high-quality, ultrathin high-κ dielectrics on such materials …