Thermal processing in the subsecond range comprises modern, non-equilibrium annealing
techniques which allow various material modifications at the surface without affecting the …

The idea to write a book about flash lamp annealing (FLA) was born when we collected
material for recent review papers [1–3]. It appeared that on the one hand sufficient …

Europium (Eu)-doped silicon oxide films with Eu concentrations from 2.1 to 4.7 at.% were
deposited by electron beam evaporation. The Eu related luminescence from the films was …

Europium gallium oxide (Eu x Ga 1-x) 2 O 3 thin films were deposited on sapphire substrates
by pulsed laser deposition with varying Eu content from x= 2.4 to 20 mol%. The optical and …

A stable Eu^ 3+? Eu^ 2+ reduction is accomplished by thermal annealing in N_2 ambient of
Eu_2O_3 films deposited by magnetron sputtering on Si substrates. Transmission electron …

The comparison of the performances of SiO 2 and SiOC layers as host matrices for optically
active Eu ions is presented. A SiO 2 matrix allows to observe light emission from both Eu 2+ …

The intense luminescence of SiOC layers is studied and its dependence on the parameters
of the thermal annealing process elucidated. Although the emission of SiOC is bright …

We report on green electroluminescence (EL) due to the intra-4f transitions of the trivalent
terbium (Tb 3+) ions inherent in a Tb 4 O 7 film that is sandwiched between the ITO film and …

Eu-doped periodic mesoporous organosilicate (PMO) films with terminal methyl and
ethylene bridging groups have been synthesized using sol-gel technology and spin-coating …

Page 1 L. Rebohle W. Skorupa SPRINGER SERIES IN MATERIALS SCIENCE 142 Rare-Earth
Implanted MOS Devices for Silicon Photonics Microstructural, Electrical and Optoelectronic …