Random-telegraph-noise-enabled true random number generator for hardware security

J Brown, JF Zhang, B Zhou, M Mehedi, P Freitas… - Scientific reports, 2020 - nature.com
The future security of Internet of Things is a key concern in the cyber-security field. One of
the key issues is the ability to generate random numbers with strict power and area …

On the accuracy in modeling the statistical distribution of random telegraph noise amplitude

M Mehedi, KH Tok, Z Ye, JF Zhang, Z Ji, W Zhang… - IEEE …, 2021 - ieeexplore.ieee.org
The power consumption of digital circuits is proportional to the square of operation voltage
and the demand for low power circuits reduces the operation voltage towards the threshold …

Self-convergent trimming SRAM true random number generation with in-cell storage

PS Yeh, CA Yang, YH Chang, YD Chih… - IEEE Journal of Solid …, 2019 - ieeexplore.ieee.org
In this paper, a novel 4T-2R self-aligned nitride (SAN) cell-integrated static random-access
memory (SRAM) cell is first implemented for true random number generator (TRNG) …

Revealing the Impact of Gate Area Scaling on Charge Trap** Employing SiO2Transistors

K Tselios, T Knobloch, D Waldhör… - … on Device and …, 2023 - ieeexplore.ieee.org
The operating characteristics of MOS transistors, such as the switching speed and power
consumption, have been improved due to the increased reduction of the lateral dimensions …

Statistical analysis and modeling of random telegraph noise based on gate delay measurement

AKMM Islam, T Nakai, H Onodera - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
We propose a characterization methodology for random telegraph noise (RTN) based on
gate delay measurement. To convert delay change to MOSFET threshold voltage fluctuation …

Random Telegraph Noise Under Switching Operation

K Kobayashi, M Islam, T Matsumoto… - Noise in Nanoscale …, 2020 - Springer
This chapter deals with random telegraph noise (RTN) under switching operation. We
measured and modeled RTN by using ring oscillator-based (RO-based) test chips. They …

[BOOK][B] Characterisation and modelling of Random Telegraph Noise in nanometre devices

M Mehedi - 2022 - search.proquest.com
The power consumption of digital circuits is proportional to the square of operation voltage
and the demand for low power circuits reduces the operation voltage towards the threshold …

Statistical Analysis and Predictive Modelling of Random Telegraph Noise in Nanometre Devices for Low Power Applications

KH Tok - 2023 - search.proquest.com
Abstract As the Internet of Things is becoming the new normal in electronics, one of the core
issues is low power consumption. The direct solution is to reduce the operation voltage …

[BOOK][B] Designing, implementing, and testing hardware for cybersecurity

J Brown - 2020 - search.proquest.com
Cybersecurity is one of the key issues facing the world today. With an ever-increasing
number of devices connected across the internet, the need to secure all these different …

AC Random Telegraph Noise (AC RTN) in Nanoscale MOS Devices

J Zou, S Guo, R Huang, R Wang - … of Nano Devices, Sensors, and MEMS, 2017 - Springer
Metal oxide semiconductor thin-film transistors (TFTs) have been recognized as the most
promising technology in the field of flexible electronics and flat-panel displays because of …