[HTML][HTML] Toward emerging gallium oxide semiconductors: A roadmap
Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
Recent advances in NiO/Ga2O3 heterojunctions for power electronics
X Lu, Y Deng, Y Pei, Z Chen… - Journal of Semiconductors, 2023 - iopscience.iop.org
Beta gallium oxide (β-Ga 2 O 3) has attracted significant attention for applications in power
electronics due to its ultra-wide bandgap of~ 4.8 eV and the large critical electric field of 8 …
electronics due to its ultra-wide bandgap of~ 4.8 eV and the large critical electric field of 8 …
Ultra-wide bandgap semiconductor Ga2O3 power diodes
J Zhang, P Dong, K Dang, Y Zhang, Q Yan… - Nature …, 2022 - nature.com
Ultra-wide bandgap semiconductor Ga2O3 based electronic devices are expected to
perform beyond wide bandgap counterparts GaN and SiC. However, the reported power …
perform beyond wide bandgap counterparts GaN and SiC. However, the reported power …
An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics
Avalanche and surge robustness involve fundamental carrier dynamics under high electric
field and current density. They are also prerequisites of any power device to survive …
field and current density. They are also prerequisites of any power device to survive …
[HTML][HTML] β-Gallium oxide power electronics
Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
6 kV/3.4 mΩ·cm2 Vertical β-Ga2O3 Schottky Barrier Diode With BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC
P Dong, J Zhang, Q Yan, Z Liu, P Ma… - IEEE Electron …, 2022 - ieeexplore.ieee.org
In this work, we show that the-Ga 2 O 3 Schottky Barrier Diode (SBD) can perform beyond
the 1-D unipolar limit of the SiC and GaN by employing a deep trench with filled thick SiO 2 …
the 1-D unipolar limit of the SiC and GaN by employing a deep trench with filled thick SiO 2 …
Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers
Vertical heterojunction NiO/β n-Ga 2 O/n+ Ga 2 O 3 rectifiers employing NiO layer extension
beyond the rectifying contact for edge termination exhibit breakdown voltages (VB) up to 4.7 …
beyond the rectifying contact for edge termination exhibit breakdown voltages (VB) up to 4.7 …
2.41 kV Vertical P-Nio/n-Ga2O3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm2
Y Wang, H Gong, Y Lv, X Fu, S Dun… - … on Power Electronics, 2021 - ieeexplore.ieee.org
In this letter, high-performance p-NiO/β-Ga 2 O 3 heterojunction diodes (HJDs) with
composite terminal structures, a p-NiO junction termination extension (JTE), and a small …
composite terminal structures, a p-NiO junction termination extension (JTE), and a small …
High-k Oxide Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode With Baliga's Figure of Merit Over 1 GW/cm2
We report a vertical (001) β-Ga2O3 field-plated (FP) Schottky barrier diode (SBD) with a
novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 μm was used to …
novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 μm was used to …
2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension
This work demonstrates vertical Ga2O3 Schottky barrier diodes (SBDs) with a novel junction
termination extension (JTE) comprising multiple layers of sputtered p-type nickel oxide …
termination extension (JTE) comprising multiple layers of sputtered p-type nickel oxide …