Defects with associated electron and nuclear spins in solid-state materials have a long
history relevant to quantum information science that goes back to the first spin echo …

Defects determine many important properties and applications of materials, ranging from
do** in semiconductors, to conductivity in mixed ionic–electronic conductors used in …

Indium gallium nitride (InGaN)-based micro-LEDs (μLEDs) are suitable for meeting ever-
increasing demands for high-performance displays owing to their high efficiency, brightness …

Photoluminescence (PL) spectroscopy is a powerful tool in studying semiconductor
properties and identifying point defects. Gallium nitride (GaN) is a remarkable …

Attaining control over the electrical conductivity of gallium nitride through impurity do** is
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …

Antimony selenide, Sb2Se3, is a highly promising solar absorber material with excellent
optoelectronic properties; solar cell efficiencies are now poised to exceed 10%, after a rapid …

CdTe is currently the largest thin-film photovoltaic technology. Non-radiative electron–hole
recombination reduces the solar conversion efficiency from an ideal value of 32% to a …

We identify the exact microscopic structure of the G photoluminescence center in silicon by
first-principles calculations with including a self-consistent many-body perturbation method …

Optically active point defects in wide-bandgap crystals are leading building blocks for
quantum information technologies including quantum processors, repeaters, simulators, and …

Optically bright emitters in hexagonal boron nitride (hBN) often acting as a source of a single-
photon are mostly attributed to point-defect centers, featuring localized intra-bandgap …