The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …

Abstract Transistor-based on Gallium Nitride (GaN) technology, has enabled energy-saving
power electronics to alleviate global energy utilization. Being the initial stages of the …

The dynamic on-state resistance (RDSON) behavior of commercial GaN devices is very
important for a GaN-based converter. Since the zero-voltage switching techniques are …

An active-passivation p-GaN gate HEMT (AP-HEMT), featuring an active p-GaN passivation
layer extending into the drain-side access region, is demonstrated on a commercial E-mode …

Gallium nitride high-electron-mobility transistors (GaN HEMTs) exhibit dynamic ON-
resistance (dR on), where the ON-resistance immediately after turn-ON is higher than the dc …

In this paper, current collapse phenomena and thermal effects in normally-off and normally-
on GaN HEMTs are investigated. The experimental results show that a high-off-state voltage …

This letter reports an extensive analysis of the charge capture transients induced by OFF-
state bias in double heterostructure AlGaN/GaN MIS-high electron mobility transistor grown …

In this work we report on the three dominant trap** mechanisms affecting the dynamic
performance of a double‐heterostructure GaN‐based MIS‐HEMT grown on silicon …

To enable the widespread adoption of GaN products, the industry needs to be convinced of
product-level reliability. The difficulty with product-level reliability lies with the diverse range …