High frequency and high efficiency operation is one of the premier interests in the signal and
energy conversion applications. The wide bandgap GaN based devices possess superior …

Graphene has been extensively investigated in the context of electronic components due to
its attractive properties, such as high carrier mobility and saturation velocity. In the past …

Abstract An X-band GaN HEMT oscillator implemented with the WIN 0.25 μm GaN HEMT
technology is proposed. The oscillator consists of a HEMT amplifier with an LC feedback …

Wide bandgap power electronics have been commercialized for many applications. Gallium
nitride (GaN) high electron mobility transistor (HEMT) has superior performance in high …

Electronic devices and circuits with negative differential resistance (NDR) are widely used in
oscillators, memory devices, frequency multipliers, mixers, etc. Such devices and circuits …

This paper reports on an ultra-low phase-noise oscillator based on a GaN HEMT monolithic
microwave integrated circuit reflection amplifier and an aluminum cavity resonator. It is …

This paper presents a fundamental mode W-band MMIC balanced Colpitts oscillator
implemented in an advanced 60 nm gallium nitride (GaN) high electron mobility transistor …

An X-band harmonic-tuned oscillator integrated circuit (IC) with high power and efficiency is
presented, utilizing gallium nitride (GaN) high electron mobility transistor (HEMT). It consists …

To investigate the effects of both the drain and gate bias voltages on the performance of
GaN high electron‐mobility transistors (HEMT) oscillator, a 0.25 µm GaN‐on‐SiC HEMT …

In this letter, a monolithic microwave integrated circuit (MMIC) cross-coupled oscillator with
high operating frequency and high output power is proposed using 0.25-gallium nitride …