More-than-moore steep slope devices for higher frequency switching applications: a designer's perspective
The progress in IC miniaturization dictated by Moore's Law has taken a leap from mere
circuit integration to IoT enabled System-on-Chip (SoC) deployments. Such systems are …
circuit integration to IoT enabled System-on-Chip (SoC) deployments. Such systems are …
The concept of electrostatic do** and related devices
Electrostatic do** aims at replacing donor/acceptor dopant species with free electron/hole
charges induced by the gates in ultrathin MOS structures. Highly doped N+/P+ terminals and …
charges induced by the gates in ultrathin MOS structures. Highly doped N+/P+ terminals and …
Steep Slope Field-Effect Transistors With Ag/TiO2-Based Threshold Switching Device
In this letter, we demonstrate a steep slope field-effect transistor (FET) using a threshold
switching (TS) device. The Ag/TiO 2-based TS device reported in our previous work was …
switching (TS) device. The Ag/TiO 2-based TS device reported in our previous work was …
Devices and circuits using novel 2-D materials: a perspective for future VLSI systems
Here, we review the most recent developments in the field of 2-D electronics. We focus first
on the synthesis of 2-D materials, discussing the different growth techniques currently …
on the synthesis of 2-D materials, discussing the different growth techniques currently …
[PDF][PDF] The tunnel field-effect transistor
The tunnel field-effect transistor (TFET) is a semiconductor device aimed at low-power logic
applications that employs band-to-band tunneling (BTBT) as a carrier injection mechanism …
applications that employs band-to-band tunneling (BTBT) as a carrier injection mechanism …
A sharp-switching device with free surface and buried gates based on band modulation and feedback mechanisms
Y Solaro, P Fonteneau, CA Legrand… - Solid-State …, 2016 - Elsevier
We propose and demonstrate experimentally a band-modulation device with extremely
sharp switching capability. The Z 3-FET (Zero gate, Zero swing and Zero impact ionization) …
sharp switching capability. The Z 3-FET (Zero gate, Zero swing and Zero impact ionization) …
Abruptly-switching MoS₂-channel atomic-threshold-switching field-effect transistor with AgTi/HfO₂-based threshold switching device
A two-dimension (2D) atomic-threshold-switching field-effect transistor (ATS-FET) was
implemented, by connecting an AgTi/HfO 2-based threshold-switching (TS) device in series …
implemented, by connecting an AgTi/HfO 2-based threshold-switching (TS) device in series …
Performance improvement of poly-Si tunnel FETs by trap density reduction
WCY Ma, YH Chen - IEEE Transactions on Electron Devices, 2015 - ieeexplore.ieee.org
In this brief, the tunnel FETs (TFETs) with a polycrystalline-Si (poly-Si) channel have been
demonstrated, and the performance of the poly-Si TFET shows a significant improvement by …
demonstrated, and the performance of the poly-Si TFET shows a significant improvement by …
Suppression of ambipolarity in tunnel‐FETs using gate oxide as parameter: analysis and investigation
In this study, the authors present a double‐gate tunnel field‐effect transistor with dual gate
oxide thickness (henceforth referred to as DOT‐DGTFET) to suppress ambipolar current …
oxide thickness (henceforth referred to as DOT‐DGTFET) to suppress ambipolar current …
Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides
The trap-assisted tunneling (TAT) current in tunnel field-effect transistors (TFETs) is one of
the crucial factors degrading the sub-60 mV/dec sub-threshold swing. To correctly predict …
the crucial factors degrading the sub-60 mV/dec sub-threshold swing. To correctly predict …