Provided is an oxynitride semiconductor comprising a metal oxynitride. The metal oxynitride
contains Zn and In and at least one element selected from the group consisting of Ga, Sn …

(57) ABSTRACT A manufacturing method of an active matrix light emitting device in which
the active matrix light emitting device can be manufactured in a shorter time with high yield …

The present invention provides a manufacturing process using a droplet-discharging
method that is Suitable for manu facturing a large Substrate in mass production. A …

0001 1. Field of the Invention 0002 The present invention relates to a semiconductor device
having a circuit including a thin film transistor (here inafter, referred to as a TFT) and to a …

An object is to provide a semiconductor device of which a manufacturing process is not
complicated and by which cost can be suppressed, by forming a thin film transistor using an …

TFT, and a flat panel display comprising the TFT are pro vided. The TFT includes a gate, a
gate insulating layer that contacts the gate, a channel layer that contacts the gate insu lating …

Provided are a thin film transistor (TFT) including a selec tively crystallized channel layer,
and a method of manufac turing the TFT. The TFT includes a gate, the channel layer, a …

An object is to provide a semiconductor device of which a manufacturing process is not
complicated and by which cost can be suppressed, by forming a thin film transistor using an …

An object of the present invention is to provide the new light-emitting device, an
electronograph and a display unit, which employ a transistor using an oxide as an active …

To provide a semiconductor device in which a defect or fault is not generated and a
manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to …