Impact of intraband relaxation on the performance of a quantum-dot laser
A Markus, JX Chen, O Gauthier-Lafaye… - IEEE Journal of …, 2003 - ieeexplore.ieee.org
Measurements on 1.3-μm quantum-dot lasers are presented that reveal a number of
interesting effects. 1) At high bias, a second lasing line appears, corresponding to the …
interesting effects. 1) At high bias, a second lasing line appears, corresponding to the …
Temperature dependence of the photoluminescence emission from InAs quantum dots in a strained Ga0. 85In0. 15As quantum well
DP Popescu, PG Eliseev, A Stintz… - … science and technology, 2003 - iopscience.iop.org
Photoluminescence from InAs quantum dots in a strained Ga 0.85 In 0.15 As quantum well is
investigated over a temperature range from 10 to 300 K using low intensity optical excitation …
investigated over a temperature range from 10 to 300 K using low intensity optical excitation …
Thermal activation of excitons in asymmetric InAs dots-in-a-well InxGa1− xAs∕ GaAs structures
TV Torchynska, JL Casas Espinola… - Journal of applied …, 2007 - pubs.aip.org
Photoluminescence, its temperature dependence, and photoluminescence excitation
spectra of InAs quantum dots embedded in asymmetric In x Ga 1− x As∕ Ga As quantum …
spectra of InAs quantum dots embedded in asymmetric In x Ga 1− x As∕ Ga As quantum …
Exciton relaxation and dephasing in quantum-dot amplifiers from room to cryogenic temperature
We present an extensive experimental study of the exciton relaxation and dephasing in
InGaAs quantum dots (QDs) in the temperature range from 10 K to 295 K. The QDs are …
InGaAs quantum dots (QDs) in the temperature range from 10 K to 295 K. The QDs are …
Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-μm-wavelength at room temperature
The carrier dynamics in an electrically pumped InAs quantum-dot amplifier emitting near 1.3-
μm-wavelength at room temperature is measured with femtosecond time resolution …
μm-wavelength at room temperature is measured with femtosecond time resolution …
Carrier diffusion in low-dimensional semiconductors: A comparison of quantum wells, disordered quantum wells, and quantum dots
We present a comparative study of carrier diffusion in semiconductor heterostructures with
different dimensionality [InGaAs quantum wells (QWs), InAs quantum dots (QDs), and …
different dimensionality [InGaAs quantum wells (QWs), InAs quantum dots (QDs), and …
Rate Equations for 1.3-m Dots-Under-a-Well and Dots-in-a-Well Self-Assembled InAs–GaAs Quantum-Dot Lasers
A rate-equation model, in which three discrete quantum-dot (QD) energy levels are assumed
and all possible relaxation paths and carrier transport in the GaAs barrier are considered, is …
and all possible relaxation paths and carrier transport in the GaAs barrier are considered, is …
Photoluminescence quenching of a low-pressure metal-organic vapor-phase-epitaxy grown quantum dots array with bimodal inhomogeneous broadening
G Saint-Girons, I Sagnes - Journal of applied physics, 2002 - pubs.aip.org
The photoluminescence (PL) behavior of a bimodal In (Ga) As/GaAs quantum dots (QDs)
array grown by low-pressure metal-organic-vapor-phase-epitaxy is studied as a function of …
array grown by low-pressure metal-organic-vapor-phase-epitaxy is studied as a function of …
Dislocation‐Induced Structural and Luminescence Degradation in InAs Quantum Dot Emitters on Silicon
This study probes the extent to which dislocations reduce carrier lifetimes and alter growth
morphology and luminescence in InAs quantum dots (QD) grown on silicon. These …
morphology and luminescence in InAs quantum dots (QD) grown on silicon. These …
Linewidth enhancement factor in InGaAs quantum-dot amplifiers
We report systematic measurements of the linewidth enhancement factor (LEF) in an
electrically pumped InGaAs quantum-dot (QD) amplifier in the temperature range from 50 K …
electrically pumped InGaAs quantum-dot (QD) amplifier in the temperature range from 50 K …