Optimizing the orientation of β-Ga 2 O 3 has emerged as an effective strategy to design high-
performance β-Ga 2 O 3 device, but the orientation growth mechanism and approach have …

This study investigates the incorporation of fluorene (F) donors in β-Ga 2 O 3 and its effects
on luminescence, defect structure and carrier dynamics. Monoclinic β-Ga 2 O 3 nanowires …

Heterojunctions of dissimilar materials are increasingly being used in optoelectronics for
their superior properties. However, the heart of the heterojunction─ its interface─ and its …

A Ag: AZO electrode was used as an electrode for a self-powered solar-blind ultraviolet
photodetector based on a Ag2O/β-Ga2O3 heterojunction. The Ag: AZO electrode was …

High-performance Ga2O3 solar-blind photodetectors are critical for applications due to their
selective solar-blind ultraviolet sensitivity. The quality of the Ga2O3 film has a significant …

ABSTRACT β-Ga2O3 is a next-generation, ultra-wide bandgap semiconductor with intrinsic
solar-blindness having the potential to replace Si for photodetection applications especially …

Traditional Type-I heterojunctions, the combination of large-and narrow-bandgap
semiconductors, possess a long electron transmission path and an electron–hole …

Recently, amorphous Ga2O3-based photodetectors are garnering interest for their relative
ease-of-growth at room temperature and their virtuous use in flexible electronics. However, a …

ABSTRACT b-Ga2O3 is an emerging ultra-wide bandgap semiconductor with wide-ranging
applications from civil to military realms. Due to the varied surface states and upward band …

In this work, improved crystal quality of (–201)-oriented β-Ga 2 O 3 thin films on N-ion
implanted sapphire (0001) substrates is demonstrated. Benefiting from the well-organized …