Advancements in 2D layered material memristors: unleashing their potential beyond memory
The scalability of two-dimensional (2D) materials down to a single monolayer offers exciting
prospects for high-speed, energy-efficient, scalable memristors. This review highlights the …
prospects for high-speed, energy-efficient, scalable memristors. This review highlights the …
Insights of BDAPbI4-Based Flexible Memristor for Artificial Synapses and In-Memory Computing
Inspired by brain-like spiking computational frameworks, neuromorphic computing-brain-
inspired computing for machine intelligence promises to realize artificial intelligence (AI) …
inspired computing for machine intelligence promises to realize artificial intelligence (AI) …
2D MoS2 monolayers integration with metal oxide-based artificial synapses
In this study, we report on a memristive device structure wherein monolayers of two-
dimensional (2D) molybdenum disulfide (MoS2) are integrated with an ultrathin yttrium oxide …
dimensional (2D) molybdenum disulfide (MoS2) are integrated with an ultrathin yttrium oxide …
Controllable Electrical Properties of ZrO2/BiFeO3 Bilayer Memristor from Synaptic Mimic to TRNG Circuit Application by Modulating Compliance Currents
Y **, M Zhu, Y Zhou, Z Zhang, J Wang… - Advanced Electronic …, 2024 - Wiley Online Library
Apart from simulating biological synapses, memristors can also be used in the secure
encryption by exploiting their inherent random resistive switching (RS) properties. In this …
encryption by exploiting their inherent random resistive switching (RS) properties. In this …
Revealing switching statistics and artificial synaptic properties of Bi2S3 memristor
Complex information processing in neuromorphic systems relies on artificial neurons and
synapses as fundamental components. Frequently, memristors are utilized as artificial …
synapses as fundamental components. Frequently, memristors are utilized as artificial …
On the time series analysis of resistive switching devices
Resistive switching (RS) based memory or memristive devices have emerged as promising
candidates for resistive random-access memory (RRAM) and neuromorphic computing …
candidates for resistive random-access memory (RRAM) and neuromorphic computing …
Improvement of synaptic property of GeSe based CBRAM by engineering the deposition condition of switching matrix
C Chung, C Choi - Materials Science in Semiconductor Processing, 2024 - Elsevier
A study of effect of deposition condition of germanium selenide (GeSe) switching layer to
Conductive bridging random access memory (CBRAM) device property was conducted to …
Conductive bridging random access memory (CBRAM) device property was conducted to …
[HTML][HTML] Influence of stop and gate voltage on resistive switching of 1T1R HfO2-based memristors, a modeling and variability analysis
Memristive devices, particularly resistive random access memory (RRAM) cells based on
hafnium oxide (HfO₂) dielectrics, exhibit promising characteristics for a wide range of …
hafnium oxide (HfO₂) dielectrics, exhibit promising characteristics for a wide range of …
In-sensor computing using Ti3C2Tx MXene memristor crossbar arrays for wearable electronics
The potential of memristor systems in sensing, storing, and processing signals make them
highly efficient and ideal for power-efficient, comfortable wearable in-sensor computing …
highly efficient and ideal for power-efficient, comfortable wearable in-sensor computing …
Influence of stop and gate voltage on resistive switching of 1T1R HfO2-based memristors, a modeling and variability analysis
D Maldonado Correa, A Cantudo Gómez… - 2024 - digibug.ugr.es
Memristive devices, particularly resistive random access memory (RRAM) cells based on
hafnium oxide (HfO₂) dielectrics, exhibit promising characteristics for a wide range of …
hafnium oxide (HfO₂) dielectrics, exhibit promising characteristics for a wide range of …