Pressure‐Induced Enhancement and Retainability of Optoelectronic Properties in Layered Zirconium Disulfide

N Wang, G Zhang, G Wang, Z Feng, Q Li, H Zhang, Y Li… - Small, 2024 - Wiley Online Library
Transition metal dichalcogenides (TMDs) exhibit excellent electronic and photoelectric
properties under pressure, prompting researchers to investigate their structural phase …

[HTML][HTML] Pressure-induced photo responsiveness enhancement and positive–negative switch in ZrSe2

N Wang, H Moutaabbid, Z Feng, G Wang… - Applied Physics …, 2024 - pubs.aip.org
ZrSe 2, a member of the group-IVB transition metal dichalcogenides, shows favorable
performance in optoelectronic applications. Here, the photoelectric properties of ZrSe 2 …

[HTML][HTML] Transport properties and electronic phase transitions in two-dimensional tellurium at high pressure

B Zou, S Wang, Q Wang, G Wang, G Zhang… - Applied Physics …, 2024 - pubs.aip.org
Utilizing in situ Raman spectroscopy, resistivity, and Hall-effect measurements, we
conducted an extensive investigation on the continuous electronic phase transitions and …

Pressure-induced phase transition and metallization in zirconium disulfide under different hydrostatic environments up to 25.3 GPa

X Zhang, L Dai, H Hu, M Hong, C Li - Materials Research Bulletin, 2024 - Elsevier
The pressurized behaviours of structure, vibration and electrical transport in zirconium
disulfide have been systematically investigated in a diamond anvil cell (DAC) under different …

Pressure-induced structural transitions and metallization in ZrSe2

Y Gao, C Liu, C Tian, C Zhu, X Huang, T Cui - Chinese Physics B, 2024 - iopscience.iop.org
High-pressure studies of two-dimensional materials have revealed numerous novel
properties and physical mechanisms behind them. As a typical material of transition metal …