Planar growth, integration, and applications of semiconducting nanowires
Y Sun, T Dong, L Yu, J Xu, K Chen - Advanced Materials, 2020 - Wiley Online Library
Silicon and other inorganic semiconductor nanowires (NWs) have been extensively
investigated in the last two decades for constructing high‐performance nanoelectronics …
investigated in the last two decades for constructing high‐performance nanoelectronics …
Rational design of nanowire solar cells: from single nanowire to nanowire arrays
In this review, we report several rational designs of nanowire-based solar cells from single
nanowire to nanowire arrays. Two methods of nanowires fabrication: via'top …
nanowire to nanowire arrays. Two methods of nanowires fabrication: via'top …
Highly sensitive ammonia gas detection at room temperature by integratable silicon nanowire field-effect sensors
X Song, R Hu, S Xu, Z Liu, J Wang, Y Shi… - … Applied Materials & …, 2021 - ACS Publications
Toxic gas monitoring at room temperature (RT) is of great concern to public health and
safety, where ultrathin silicon nanowires (SiNWs), with diameter< 80 nm, are ideal one …
safety, where ultrathin silicon nanowires (SiNWs), with diameter< 80 nm, are ideal one …
Helical stacking assembly of orderly silicon nanowire multilayers for ultrastrong dissymmetrical amplification of circularly polarized light
TG Dong, ZG Wu, FL Li, JZ Wang… - Advanced Optical …, 2022 - Wiley Online Library
Circularly polarized organic light‐emitting diodes (CP‐OLEDs) are ideal candidates to
explore novel applications such as 3D displays, optical storage, and quantum computing …
explore novel applications such as 3D displays, optical storage, and quantum computing …
Oriented layered Bi2O2Se nanowire arrays for ultrasensitive photodetectors
J Li, Z Wang, J Chu, Z Cheng, P He, J Wang… - Applied Physics …, 2019 - pubs.aip.org
Due to its high carrier mobility, superior air stability, and intriguing self-modulation do**
effects, Bi 2 O 2 Se has shown great potential for applications in high performance field …
effects, Bi 2 O 2 Se has shown great potential for applications in high performance field …
Deterministic line-shape programming of silicon nanowires for extremely stretchable springs and electronics
Z Xue, M Sun, T Dong, Z Tang, Y Zhao, J Wang… - Nano …, 2017 - ACS Publications
Line-shape engineering is a key strategy to endow extra stretchability to 1D silicon
nanowires (SiNWs) grown with self-assembly processes. We here demonstrate a …
nanowires (SiNWs) grown with self-assembly processes. We here demonstrate a …
Synthesis of SnO2 nanowires using thermal chemical vapor deposition with SnO powder and their application as self-powered ultraviolet photodetectors
We report on the performance of self-powered ultraviolet (UV) photodetectors composed of
SnO 2 nanowire (NW) networks. SnO 2 NWs with a length of several hundred micrometers …
SnO 2 nanowire (NW) networks. SnO 2 NWs with a length of several hundred micrometers …
Growth mechanism and dynamics of in-plane solid-liquid-solid silicon nanowires
In this paper, we investigate the growth mechanism and dynamic behavior of in-plane solid-
liquid-solid (IPSLS) silicon nanowires (SiNWs), mediated by indium drops which transform …
liquid-solid (IPSLS) silicon nanowires (SiNWs), mediated by indium drops which transform …
Unprecedented uniform 3d growth integration of 10-layer stacked si nanowires on tightly confined sidewall grooves
R Hu, S Xu, J Wang, Y Shi, J Xu, K Chen, L Yu - Nano Letters, 2020 - ACS Publications
Bottom-up catalytic growth offers a high-yield, versatile, and powerful tool for the
construction of versatile 3D nanocomplexes, while the major challenge is to achieve a …
construction of versatile 3D nanocomplexes, while the major challenge is to achieve a …
Step-necking growth of silicon nanowire channels for high performance field effect transistors
L Wu, Z Hu, L Liang, R Hu, J Wang, L Yu - Nature Communications, 2025 - nature.com
Ultrathin silicon nanowires (diameter< 30 nm) with strong electrostatic control are ideal
quasi-1D channel materials for high-performance field effect transistors, while a short …
quasi-1D channel materials for high-performance field effect transistors, while a short …