Ultrashallow do** is required for both classical field-effect transistors in integrated circuits
and revolutionary quantum devices in quantum computing. In this review, we give a brief …

The pressing trend towards downscaling of microelectronic devices constantly requires
updated technologies capable of precise control of dopant atom dose in semiconductive …

Porous carbon materials have increasingly drawn interest for applications ranging from
supercapacitive energy storage to bioengineering. However, a simple and scalable …

The reaction of boron trichloride with the H-and Cl-terminated Si (1 0 0) surfaces was
investigated to understand the interaction of this molecule with the surface for designing wet …

Porous materials continue to establish critically important roles in applications extending
from greenhouse gas capture to thermal superinsulation. Their effective structural control by …

Phosphorus δ-layers in SiO2 have been prepared by means of poly (methyl
methacrylate)(PMMA), terminated with a phosphorus-containing moiety acting as an …

An effective do** technology for the precise control of P atom injection and activation into
a semiconductor substrate is presented. Polystyrene polymers with a narrow molecular …

Polystyrene samples with different molar mass and narrow polydispersity index were
prepared by nitroxide-mediated polymerization using N-tert-butyl-N-[1-diethylphosphono (2 …

Overcoming throughput challenges in current graphene defect healing processes, such as
conventional thermal annealing, is crucial for realizing post‐silicon device fabrication …

Stabilizing ultrathin films, in particular avoiding dewetting, is critical to the application of
polymer thin films from biology to electronics. To address this issue, a wide range of …