In the modern semiconductor industry, there is a growing need to understand and combat
potential radiation damage problems. Space applications are an obvious case, but, beyond …

Ion-beam-induced amorphization in Si has attracted significant interest since the beginning
of the use of ion implantation for the fabrication of Si devices. A number of theoretical …

The introduction of intermediate band (IB) into the bandgap of silicon (Si) is an efficient way
to enhance light absorption of Si in the short-wave infrared region. In this article, we report …

This work focuses on the full characterization of dislocation loops induced by proton
irradiation in single-crystal ThO 2. Irradiation was performed using 2 MeV H+ ions with …

Photoelectrochemical (PEC) conversion processes are recently emerging in solar energy
technology. To avoid high cost and special preparation conditions, thin films of …

Ion implantation is a technology suitable for the formation of high quality junctions in silicon
solar cell processing. As screen-printing is the state of the art metallization technique for …

Segregation of Ni was observed by atom probe tomography at the edges of a pseudo-
hexagonal dislocation loop within As+-implanted (001) Si wafers, after Ni deposition but …

In this paper, we first review the trends for advanced CMOS devices in terms of architectures
and scalability. The paper highlights the key process challenges for planar MOSFET and …

Extended defects formed by high-fluence helium implantation in silicon have been studied
as a function of the implantation temperature, from room temperature up to 800° C …

A short review of the current understanding and modelling of the formation of ion beam
induced defects in crystalline silicon is given in the first part of this article. Some recent …