Through the introduction of a new electron spin transport mechanism, a 2D donor electron
spin quantum computer architecture is proposed. This design addresses major technical …

We describe a method to control and detect in single shot the electron spin state of an
individual donor in silicon with greatly enhanced sensitivity. A silicon-based single-electron …

The ability to control dynamics of quantum states by optical interference, and subsequent
electrical read-out, is crucial for solid state quantum technologies. Ramsey interference has …

We propose a scheme for quantum information processing based on donor electron spins in
semiconductors, with an architecture complementary to the original Kane proposal. We …

We resolve the remarkably sharp bound exciton transitions of highly enriched Si 28 using a
single-frequency laser and photoluminescence excitation spectroscopy, as well as …

We analyze several important issues for the single-and two-qubit operations in Si quantum
computer architectures involving P donors close to a Si O 2 interface. For a single donor, we …

We consider charge qubits based on shallow donor electron states in silicon and coupled
quantum dots in GaAs. Specifically, we study the feasibility of P 2+ charge qubits in Si …

Two-electron states bound to donors in silicon are important for both two-qubit gates and
spin readout. We present a full configuration interaction technique in the atomistic tight …

We present atomistic simulations of the D 0 to D− charging energies of a gated donor in
silicon as a function of applied fields and donor depths and find good agreement with …

The relaxation times of excited states of arsenic dopant in germanium at cryogenic
temperatures T< 15 K have been experimentally studied by the optical pump-probe method …