Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …

The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …

Carrier concentration profiles of two-dimensional electron gases are investigated in wurtzite,
Ga-face Al x Ga 1− x N/GaN/Al x Ga 1− x N and N-face GaN/Al x Ga 1− x N/GaN …

Two dimensional electron gases in Al x Ga 1− x N/GaN based heterostructures, suitable for
high electron mobility transistors, are induced by strong polarization effects. The sheet …

The macroscopic nonlinear pyroelectric polarization of wurtzite Al x Ga 1-x N, In x Ga 1-x N
and Al x In 1-x N ternary compounds (large spontaneous polarization and piezoelectric …

During the last few years the developments in the field of III–nitrides have been spectacular.
High quality epitaxial layers can now be grown by MOVPE. Recently good quality epilayers …

The dc small-signal, and microwave power output characteristics of AlGaN/GaN HEMTs are
presented. A maximum drain current greater than 1 A/mm and a gate-drain breakdown …

It is well known that trap** effects can limit the output power performance of microwave
field-effect transistors (FETs). This is particularly true for the wide bandgap devices. In this …

GaN and related materials (especially AlGaN) have recently attracted a lot of interest for
applications in high power electronics capable of operation at elevated temperatures …

We compare self-heating effects in AlGaN-GaN heterostructure field effect transistors
(HFETs) grown on sapphire and SiC substrates. Heat dissipation strongly affects the device …