From the future Si technology perspective: Challenges and opportunities

K Kim - 2010 International Electron Devices Meeting, 2010 - ieeexplore.ieee.org
As silicon technology enters sub-20nm nodes, new materials, structures and processes are
being introduced in order to continue with the advantages of dimensional scaling, eg, 3D …

Integrated circuit packaging review with an emphasis on 3D packaging

A Lancaster, M Keswani - Integration, 2018 - Elsevier
An introduction to the exciting and continuously growing topic of IC packaging is presented
herein. This review starts with a beginner's level introduction to microelectronic packaging …

Secure interposer-based heterogeneous integration

MSM Khan, C **, AA Khan, MT Rahman… - IEEE Design & …, 2022 - ieeexplore.ieee.org
Secure Interposer-Based Heterogeneous Integration Page 1 156 2168-2364/22©2022 IEEE
Copublished by the IEEE CEDA, IEEE CASS, IEEE SSCS, and TTTC IEEE Design&Test …

3-D integration and through-silicon vias in MEMS and microsensors

Z Wang - Journal of Microelectromechanical Systems, 2015 - ieeexplore.ieee.org
After two decades of intensive development, 3-D integration has proven invaluable for
allowing integrated circuits to adhere to Moore's Law without needing to continuously shrink …

[BOOK][B] Metrology and Diagnostic Techniques for Nanoelectronics

Z Ma, DG Seiler - 2017 - taylorfrancis.com
Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …

Fabrication of high aspect ratio, non-line-of-sight vias in silicon carbide by a two-photon absorption method

JE Payne, P Nyholm, R Beazer, J Eddy… - Scientific Reports, 2024 - nature.com
The future of Moore's Law for high-performance integrated circuits (ICs) is going to be driven
more by advanced packaging and three-dimensional (3D) integration than by simply …

Security and vulnerability implications of 3D ICs

Y **e, C Bao, C Serafy, T Lu… - … on Multi-Scale …, 2016 - ieeexplore.ieee.org
Physical limit of transistor miniaturization has driven chip design into the third dimension. 3D
integration technology emerges as a viable option to improve chip performance and …

TSV antennas for multi-band wireless communication

V Pano, I Tekin, I Yilmaz, Y Liu… - IEEE Journal on …, 2020 - ieeexplore.ieee.org
On-chip wireless links offer improved network performance due to long distance
communication, additional bandwidth, and broadcasting capabilities of antennas. This work …

Post-bond testing of 2.5 D-SICs and 3D-SICs containing a passive silicon interposer base

CC Chi, EJ Marinissen, SK Goel… - 2011 IEEE International …, 2011 - ieeexplore.ieee.org
Through-Silicon Vias (TSVs) enable high-density, low-latency, and low-power interconnects
for system chips that consist of multiple dies. In “2.5 D” Stacked ICs (2.5 D-SICs), multiple …

Single-phase microfluidic cooling of 2.5 D-SICs for heterogeneous integration

Y Hu, Y Joshi - IEEE Transactions on Components, Packaging …, 2020 - ieeexplore.ieee.org
A parametric study of a nonuniform pin-fin-enhanced single-phase microfluidic cooling
design for 2.5 D stacked integrated circuits (2.5 D-SICs) heterogeneous integration is …