Adsorbed layer and thin film growth modes monitored by Auger electron spectroscopy
C Argile, GE Rhead - Surface Science Reports, 1989 - Elsevier
Quantitative surface chemistry depends crucially on an accurate analysis of adsorbed
quantities in the range from submonolayer coverages to several monolayers. Auger electron …
quantities in the range from submonolayer coverages to several monolayers. Auger electron …
Growth and characterization of epitaxial Ni and Co silicides
H Von Känel - Materials Science Reports, 1992 - Elsevier
This review presents an overview on the recent progress achieved in the epitaxial growth of
Ni and Co silicides on Si (111) by UHV deposition techniques. While focusing on the …
Ni and Co silicides on Si (111) by UHV deposition techniques. While focusing on the …
Ion beam crystallography of surfaces and interfaces
JF van der Veen - Surface Science Reports, 1985 - Elsevier
The current status of Rutherford Backscattering Spectrometry (RBS) of surfaces and
interfaces is reviewed. The reader is made familiar with the use of shadowing and blocking …
interfaces is reviewed. The reader is made familiar with the use of shadowing and blocking …
Influence of surfactants in Ge and Si epitaxy on Si (001)
Epitaxial growth of heterolayers has in the past relied on optimization of growth conditions to
overcome thermodynamic obstacles. When there is an intrinsic tendency of a heterolayer to …
overcome thermodynamic obstacles. When there is an intrinsic tendency of a heterolayer to …
Novel growth of Ag islands on Si (111): Plateaus with a singular height
Growth and transport properties of thin Ag films on Si (111) are investigated by scanning
tunneling microscopy and in situ resistivity measurements. At low coverage, the Ag adatoms …
tunneling microscopy and in situ resistivity measurements. At low coverage, the Ag adatoms …
Mechanisms of epitaxial growth
I Markov, S Stoyanov - Contemporary physics, 1987 - Taylor & Francis
Abstract 'Epitaxy'means order in the relative orientation of identical crystals nucleated and
grown on a large single-crystal face. Every crystal of the deposited material is oriented in …
grown on a large single-crystal face. Every crystal of the deposited material is oriented in …
Thin epitaxial Ge− Si (111) films: Study and control of morphology
PMJ Maree, K Nakagawa, FM Mulders… - Surface science, 1987 - Elsevier
The morphology and surface structure of Ge− Si (111) films during the initial stages of
heteroepitaxial growth are studied with high-resolution RBS, RHEED, SEM and TEM. It is …
heteroepitaxial growth are studied with high-resolution RBS, RHEED, SEM and TEM. It is …
Structure analysis of the Si(111)√3 × √3 R30°-Ag surface
The structure of the Si (111)√ 3×√ 3 R30-Ag surface has been analyzed with a novel form
of low-energy ion-scattering spectroscopy and energy-minimization calculations. The …
of low-energy ion-scattering spectroscopy and energy-minimization calculations. The …
Electronic properties on silicon-transition metal interface compounds
C Calandra, O Bisi, G Ottaviani - Surface Science Reports, 1985 - Elsevier
The article reviews recent experimental and theoretical work on the electronic properties of
transition metal-silicides and of silicon-silicide interfaces. After a short description of the …
transition metal-silicides and of silicon-silicide interfaces. After a short description of the …
Local electron states and surface geometry of Si(111)-√3 √3 Ag
Scanning tunneling microscopy and current-imaging spectroscopy are used to determine
the local structural arrangement and stoichiometry of√ 3×√ 3 Ag on Si (111). The nature of …
the local structural arrangement and stoichiometry of√ 3×√ 3 Ag on Si (111). The nature of …