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Submonolayer quantum dots for optoelectronic devices
Semiconductor quantum dots (QD) have been extensively applied in optical and
optoelectronic devices because of their strong quantum confinement and bandgap …
optoelectronic devices because of their strong quantum confinement and bandgap …
Investigation of junction electric fields for InAs quantum dot solar cells with photoreflectance spectroscopy
The pn junction electric field (F pn) of InAs quantum dot solar cell (QDSC) structure was
investigated using photoluminescence and photoreflectance spectroscopy. Quantum dot …
investigated using photoluminescence and photoreflectance spectroscopy. Quantum dot …
Transition metal (ii) ion do** of CsPb 2 Br 5/CsPbBr 3 perovskite nanocrystals enables high luminescence efficiency and stability
J Deng, Y Cui, Z Jiang, R Du, L Yang… - Journal of Materials …, 2022 - pubs.rsc.org
All-inorganic cesium lead halide perovskite nanocrystals (NCs) have emerged as promising
optoelectronic nanomaterials due to their color-tunable and high photoluminescence …
optoelectronic nanomaterials due to their color-tunable and high photoluminescence …
Photoluminescence study of InAs/InGaAs sub-monolayer quantum dot infrared photodetectors with various numbers of multiple stack layers
This study investigated the effects of the number of stacking layers (S) on the optical
properties of InAs/InGaAs sub-monolayer quantum dot (SML-QD) infrared photodetectors by …
properties of InAs/InGaAs sub-monolayer quantum dot (SML-QD) infrared photodetectors by …
[HTML][HTML] Tuning photoresponsive and dielectric properties of PVA/CdSe films by cap** agent change
In the present work, hybrid organic-inorganic nanocomposite films based on poly (vinyl
alcohol)(PVA) and CdSe quantum dots synthesized in aqueous medium were prepared …
alcohol)(PVA) and CdSe quantum dots synthesized in aqueous medium were prepared …
Phase-sensitive analysis of a two-color infrared photodetector using photoreflectance spectroscopy
The phase diagrams of photoreflectance spectra were investigated for an InGaAs two-color
infrared photodetector. The diagrams for a high excitation intensity revealed that the …
infrared photodetector. The diagrams for a high excitation intensity revealed that the …
[HTML][HTML] Ultrathin and easy-processing photonic crystal absorbing layers to enhance light absorption efficiency of solar cells
Y Wan, C Jiang, X Wang, H Liu, H Wang, Z Cai, X Guo - APL Materials, 2019 - pubs.aip.org
We report the design and optimization of photonic crystal (PhC) structures within a GaAs or
InAs absorption layer in thin film solar cells. In the PhC structure, hexagonal cylinder hole …
InAs absorption layer in thin film solar cells. In the PhC structure, hexagonal cylinder hole …
Ameliorating the optical and structural properties of InAs quantum dot heterostructures through digital alloy cap** materials: Theory and experiment
In this study, we have employed a unique technique called digital alloy cap** to grow the
strain reducing cap** layer on InAs quantum dots (QDs). Four different cap** materials …
strain reducing cap** layer on InAs quantum dots (QDs). Four different cap** materials …
Tracing the two-to three-dimensional transition in InAs/GaAs sub-monolayer quantum dot growth
A two-to three-dimensional (2D to 3D) transition in InAs/GaAs sub-monolayer quantum dot
(SML-QD) growth was investigated, and its evolution was traced. From the AFM results, the …
(SML-QD) growth was investigated, and its evolution was traced. From the AFM results, the …
Photoreflectance study on the photovoltaic effect in InAs/GaAs quantum dot solar cell
To investigate the effect of quantum dot (QD) layers on the photovoltaic process of
InAs/GaAs QD solar cell (QDSC), QD layers were embedded in conventional GaAs pn …
InAs/GaAs QD solar cell (QDSC), QD layers were embedded in conventional GaAs pn …