Submonolayer quantum dots for optoelectronic devices

Y Kim, JO Kim, SJ Lee, SK Noh - Journal of the Korean Physical Society, 2018 - Springer
Semiconductor quantum dots (QD) have been extensively applied in optical and
optoelectronic devices because of their strong quantum confinement and bandgap …

Investigation of junction electric fields for InAs quantum dot solar cells with photoreflectance spectroscopy

G Du Park, J Du Ha, TI Kang, JS Kim, Y Kim… - Current Applied …, 2023 - Elsevier
The pn junction electric field (F pn) of InAs quantum dot solar cell (QDSC) structure was
investigated using photoluminescence and photoreflectance spectroscopy. Quantum dot …

Transition metal (ii) ion do** of CsPb 2 Br 5/CsPbBr 3 perovskite nanocrystals enables high luminescence efficiency and stability

J Deng, Y Cui, Z Jiang, R Du, L Yang… - Journal of Materials …, 2022 - pubs.rsc.org
All-inorganic cesium lead halide perovskite nanocrystals (NCs) have emerged as promising
optoelectronic nanomaterials due to their color-tunable and high photoluminescence …

Photoluminescence study of InAs/InGaAs sub-monolayer quantum dot infrared photodetectors with various numbers of multiple stack layers

JS Kim, JC Shin, JO Kim, SK Noh, SJ Lee… - Journal of …, 2019 - Elsevier
This study investigated the effects of the number of stacking layers (S) on the optical
properties of InAs/InGaAs sub-monolayer quantum dot (SML-QD) infrared photodetectors by …

[HTML][HTML] Tuning photoresponsive and dielectric properties of PVA/CdSe films by cap** agent change

I Barandiaran, J Gutierrez, H Etxeberria… - Composites Part A …, 2019 - Elsevier
In the present work, hybrid organic-inorganic nanocomposite films based on poly (vinyl
alcohol)(PVA) and CdSe quantum dots synthesized in aqueous medium were prepared …

Phase-sensitive analysis of a two-color infrared photodetector using photoreflectance spectroscopy

B Zeinalvand Farzin, DK Lee, TI Kang, JS Kim… - Journal of Applied …, 2023 - pubs.aip.org
The phase diagrams of photoreflectance spectra were investigated for an InGaAs two-color
infrared photodetector. The diagrams for a high excitation intensity revealed that the …

[HTML][HTML] Ultrathin and easy-processing photonic crystal absorbing layers to enhance light absorption efficiency of solar cells

Y Wan, C Jiang, X Wang, H Liu, H Wang, Z Cai, X Guo - APL Materials, 2019 - pubs.aip.org
We report the design and optimization of photonic crystal (PhC) structures within a GaAs or
InAs absorption layer in thin film solar cells. In the PhC structure, hexagonal cylinder hole …

Ameliorating the optical and structural properties of InAs quantum dot heterostructures through digital alloy cap** materials: Theory and experiment

R Kumar, J Saha, D Panda, R Kumar, SA Gazi… - Optical Materials, 2020 - Elsevier
In this study, we have employed a unique technique called digital alloy cap** to grow the
strain reducing cap** layer on InAs quantum dots (QDs). Four different cap** materials …

Tracing the two-to three-dimensional transition in InAs/GaAs sub-monolayer quantum dot growth

JS Kim, SK Noh, SJ Lee, M Hopkinson - Applied Surface Science, 2020 - Elsevier
A two-to three-dimensional (2D to 3D) transition in InAs/GaAs sub-monolayer quantum dot
(SML-QD) growth was investigated, and its evolution was traced. From the AFM results, the …

Photoreflectance study on the photovoltaic effect in InAs/GaAs quantum dot solar cell

S Yoon, SH Lee, JC Shin, JS Kim, SJ Lee… - Current Applied …, 2018 - Elsevier
To investigate the effect of quantum dot (QD) layers on the photovoltaic process of
InAs/GaAs QD solar cell (QDSC), QD layers were embedded in conventional GaAs pn …