A recent progress of spintronics devices for integrated circuit applications
T Endoh, H Honjo - Journal of Low Power Electronics and Applications, 2018 - mdpi.com
Nonvolatile (NV) memory is a key element for future high-performance and low-power
microelectronics. Among the proposed NV memories, spintronics-based ones are …
microelectronics. Among the proposed NV memories, spintronics-based ones are …
Electric field-induced creation and directional motion of domain walls and skyrmion bubbles
Skyrmion-mediated voltage-controlled switching of ferromagnets for reliable and energy-efficient two-terminal memory
We propose a two-terminal nanomagnetic memory element based on magnetization
reversal of a perpendicularly magnetized nanomagnet employing a unipolar voltage pulse …
reversal of a perpendicularly magnetized nanomagnet employing a unipolar voltage pulse …
Nematic and smectic stripe phases and stripe-SkX transformations
Based on the findings of skyrmion nature of stripes and the metastability of a state of an
arbitrary number of skyrmions, precisely controlled manipulation of stripes of skyrmion …
arbitrary number of skyrmions, precisely controlled manipulation of stripes of skyrmion …
Electric-field effect on spin-wave resonance in a nanoscale CoFeB/MgO magnetic tunnel junction
We investigate the electric-field effect on the exchange stiffness constant in a CoFeB/MgO
junction through the observation of the spin-wave resonance in a nanoscale magnetic …
junction through the observation of the spin-wave resonance in a nanoscale magnetic …
Multi‐Level Switching and Reversible Current Driven Domain‐Wall Motion in Single CoFeB/MgO/CoFeB‐Based Perpendicular Magnetic Tunnel Junctions
One of the critical issues in spintronics‐based technologies is to increase the data storage
density. Current strategy is based on shrinking the devices size down to tens of nanometers …
density. Current strategy is based on shrinking the devices size down to tens of nanometers …