The recent advancements in multivalued logic gates represent a rapid paradigm shift in
semiconductor technology toward a new era of hyper Moore's law. Particularly, the …

An antiambipolar transistor exhibits a steep increase and decrease in drain current within a
certain range of gate bias voltage. This unique feature is brought about by a partially stacked …

In this paper, we propose and investigate a novel heterojunction T-shaped tunneling field-
effect transistor (TTFET) using Sentaurus technology computer-aided design (TCAD) …

Anti-ambipolar switch (AAS) devices at a narrow bias region are necessary to solve the
intrinsic leakage current problem of ternary logic circuits. In this study, an AAS device with a …

In this paper, we have developed a new 2D compact analytical model for surface potential
and drain current for III-V group heterojunction of T-shaped Vertical Tunneling FET with …

The research field on tunnel-FETs (TFETs) has been rapidly develo** in the last ten years,
driven by the quest for a new electronic switch operating at a supply voltage well below 1 V …

Organic antiambipolar transistors (AATs) have partially overlapped p–n junctions. At room
temperature, this p–n junction induces a negative differential transconductance in an AAT …

While core–shell wire-based devices offer a promising path toward improved optoelectronic
applications, their development is hampered by the present uncertainty about essential …

The tunnel field-effect transistor (TFET) is regarded as one of the most promising solid-state
switches to overcome the power dissipation challenge in ultra-low power integrated circuits …

Negative differential resistance (NDR) has large potential for versatile device applications,
including high‐frequency oscillators, memories, fast switches, and multilevel logic circuits …