Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …

The InSb photodetector on a Si substrate acts as a signal receiver for the mid-infrared silicon
photonics application to overcome the limitation of group IV semiconductors. In this paper …

Strain and band gap engineered epitaxial germanium (ε-Ge) quantum-well (QW) laser
structures were investigated on GaAs substrates theoretically and experimentally for the first …

Group IV-based germanium–tin (Ge1− ySny) compositional materials have recently shown
great promise for infrared detection, light emission and ultra-low power transistors. High …

The application of high values of strain to Ge considerably improves its light emission
properties and can even turn it into a direct band gap semiconductor. Raman spectroscopy …

Tensile-strained germanium (ε-Ge) has attracted significant interest due to its unique
properties in emerging optoelectronic devices. High tensile-strained Ge materials with …

We report contactless effective minority carrier lifetime of epitaxially grown unstrained and in-
plane< 110> biaxially tensile-strained (001) germanium (ε-Ge) epilayers measured using …

Here, we have analyzed the electrical and optical phenomenon occurring in a ϵ-Ge/In x Ga
1-x As quantum well (QW) laser through self-consistent physical solvers calibrated using in …

The interface chemistry and energy band alignment properties of atomic layer deposited
(ALD) tantalum silicate (TaSiOx) dielectrics on crystallographically-oriented, epitaxial (001) …

Germanium is an indirect semiconductor which attracts particular interest as an electronics
and photonics material due to low indirect-to-direct band separation. In this work we bend …