Magnetocardiography and magnetoencephalography measurements at room temperature using tunnel magneto-resistance sensors
K Fujiwara, M Oogane, A Kanno, M Imada… - Applied Physics …, 2018 - iopscience.iop.org
Magnetocardiography (MCG) and magnetoencephalography (MEG) signals were detected
at room temperature using tunnel magneto-resistance (TMR) sensors. TMR sensors …
at room temperature using tunnel magneto-resistance (TMR) sensors. TMR sensors …
Three-Dimensional Nanoconfinement Supports Verwey Transition in Fe3O4 Nanowire at 10 nm Length Scale
R Rakshit, AN Hattori, Y Naitoh, H Shima… - Nano Letters, 2019 - ACS Publications
Herein, we construct three-dimensional (3D) Fe3O4 epitaxial nanowires at a 10 nm length
scale on a 3D MgO nanotemplate using an original nanofabrication technique that mainly …
scale on a 3D MgO nanotemplate using an original nanofabrication technique that mainly …
Creation of atomically flat Si {111} 7× 7 side-surfaces on a three-dimensionally-architected Si (110) substrate
AN Hattori, K Hattori, S Takemoto, H Daimon, H Tanaka - Surface Science, 2016 - Elsevier
The realization of atomically flat side-surfaces, which are vertical planes on a substrate,
would make an enormous contribution to a paradigm shift from two-dimensional planar film …
would make an enormous contribution to a paradigm shift from two-dimensional planar film …
Methods of creating and observing atomically reconstructed vertical Si {100},{110}, and {111} side-surfaces
AN Hattori, S Takemoto, K Hattori… - Applied Physics …, 2016 - iopscience.iop.org
We demonstrated the creation of atomically ordered side-surfaces and examined the
perfection of the side-surface structures. Atomically reconstructed Si {100},{110}, and {111} …
perfection of the side-surface structures. Atomically reconstructed Si {100},{110}, and {111} …
Identification of giant mott phase transition of single electric nanodomain in manganite nanowall wire
In the scaling down of electronic devices, functional oxides with strongly correlated electron
system provide advantages to conventional semiconductors, namely, huge switching owing …
system provide advantages to conventional semiconductors, namely, huge switching owing …
Fabrication of three-dimensional epitaxial (Fe, Zn) 3O4 nanowall wire structures and their transport properties
AN Hattori, Y Fujiwara, K Fujiwara… - Applied Physics …, 2014 - iopscience.iop.org
We have established a unique technique to fabricate three-dimensional (3D) well-defined
transition-metal oxide epitaxial nanostructures. Fabrication of epitaxial spinel ferrite Fe 2.2 …
transition-metal oxide epitaxial nanostructures. Fabrication of epitaxial spinel ferrite Fe 2.2 …
Colossal magnetoresistive (La, Pr, Ca) MnO3 nanobox array structures constructed by the three-dimensional nanotemplate pulsed laser deposition technique
TVA Nguyen, AN Hattori, Y Fujiwara, S Ueda… - Applied Physics …, 2013 - pubs.aip.org
Precisely size-controlled and crystalline (La 0.275 Pr 0.35 Ca 0.375) MnO 3 (LPCMO)
nanobox array structures were fabricated down to 30 nm in wall-width by the three …
nanobox array structures were fabricated down to 30 nm in wall-width by the three …
Enhancement of discrete changes in resistance in engineered VO2 heterointerface nanowall wire
S Tsubota, AN Hattori, T Nakamura… - Applied Physics …, 2017 - iopscience.iop.org
The nanoconfinement effect in three-dimensional (3D) space was investigated for strongly
correlated VO 2. Three-dimensional VO 2 nanowall wires (nws) with an engineered …
correlated VO 2. Three-dimensional VO 2 nanowall wires (nws) with an engineered …
Effect of annealing on the structural, morphological and optical Properties of MgO nanowall structures grown by SILAR method
D İskenderoğlu, H Güney - Journal of Electronic Materials, 2019 - Springer
In this study, MgO nanowall structures were grown on the glass substrate by the successive
ionic layer adsorption and reaction (SILAR) method, and systematic annealing temperature …
ionic layer adsorption and reaction (SILAR) method, and systematic annealing temperature …
Artificial three dimensional oxide nanostructures for high performance correlated oxide nanoelectronics
H Tanaka, H Takami, T Kanki, AN Hattori… - Japanese Journal of …, 2014 - iopscience.iop.org
We report a strategy for controlling nanoscopic electronic domains to produce gigantic Mott
metal–insulator transition phenomena in strongly correlated oxides by fabricating oxide …
metal–insulator transition phenomena in strongly correlated oxides by fabricating oxide …