In this study, we systematically investigated the Analog/RF and linearity parameter of SM
DGNCFET (single metal double gate negative capacitance field effect transistor) and DM …

This paper reports the sensitivity analysis of double gate TFET using the Transition Metal Di
chalcogenide (TMD) material in photo sensitive region with the help of technology computer …

The present work focuses on investigating the performance of partial ground plane selective
buried oxide negative capacitance (NC) field-effect transistor (NCFET) electrical properties …

Here, we examine the impact of various trap charges on the baseline and NC PGPFET
(negative capacitance partial ground plane FET) by applying localized charges …

The operational framework of upcoming electronic devices is under examination to identify
substitutes for MOSFETs, aiming to decrease power densities and alleviate constraints on …

This study introduces the Variable Length Dual Dielectric Material-Gate Spacer Engineering
Heterostructure Junction-Less Tunnel Field-Effect Transistor (VLDD-GSE-HJLTFET), a novel …

At the sub-22 nm technology node, junctionless FinFETs are regarded as advantageous
alternatives for conventional FinFET due to their simpler fabrication and uniform do** …

In this investigation, a suppressed channel-rectangular core–shell double gate junctionless
field effect transistor (SC_RCS_DGJLFET) is simulated to enhance the junctionless device's …

As the negative capacitance field-effect transistors (NCFETs) have extensive application
prospects and advanced technological support in the analog/radio-frequency (RF) domains …

Here we proposes and optimizes a delta doped dual spacer negative capacitance TFET to
improve ON current, steeper sub threshold slope, and ON to OFF current ratio. The inclusion …