We have studied by Raman spectroscopy and electro-optical characterization the properties
of thin boron doped microcrystalline silicon layers deposited by plasma enhanced chemical …

Boron-doped nanocrystalline silicon-carbide (p-nc-SiC: H) films with a low-concentration of
hydrogen-dilution were grown by a mercury-sensitized photo-chemical vapor deposition …

Thin films of microcrystalline hydrogenated silicon (µc-Si: H) and nanocrystalline silicon
carbide (nc-SiC: H) provide a new class of advanced nanostructured materials for solar …

P-type microcrystalline silicon-carbon alloy thin films have been prepared at low power by
employing radio-frequency plasma-enhanced chemical vapor deposition (rf-PECVD) …

We have developed carbon added p-type microcrystalline silicon for the improvement of the
open circuit voltage (Voc) of microcrystalline Si solar cells. Voc and fill factor (FF) shows the …

We select the boron as a dopant of wide bandgap nanocrystalline silicon-carbide (nc-SiC:
H) film in order to achieve a high conductivity. Boron atoms introduced at the growing …

Highly conducting boron-doped microcrystalline silicon carbide (μc-SiC: H) thin films have
been prepared by mercury sensitised photochemical vapor deposition. The chamber …

Hydrogenated boron-doped microcrystalline silicon-carbide (p-µc-SiC: H) films were grown
by a photo chemical vapor deposition (photo-CVD) method from silane (SiH 4), hydrogen (H …

The co-precipitation of Si and SiC quantum dots (QDs) in Si-rich silicon carbide (Si-rich SiC)
films with n-type and p-type dopants is preliminarily demonstrated with low-temperature …

Different amounts of oxygen, boron-doped hydrogenated amorphous silicon (a-Si: H) and
hydrogenated microcrystalline silicon (μc-Si: H) deposition were carried out using catalytic …