Electronic and optical properties of quantum dots on InP(100) and substrates: Theory and experiment

C Cornet, A Schliwa, J Even, F Doré, C Celebi… - Physical Review B …, 2006 - APS
We study the electronic and optical properties of In As∕ In P quantum dots (QDs) on (100)
and (311) B substrates. Atomic force microscopy (AFM) and cross-sectional scanning …

Optical and microwave control of resonance fluorescence and squeezing spectra in a polar molecule

MA Antón, S Maede-Razavi, F Carreño, I Thanopulos… - Physical Review A, 2017 - APS
A two-level quantum emitter with broken inversion symmetry simultaneously driven by an
optical field and a microwave field that couples to the permanent dipole's moment is …

Molecular beam epitaxy of GaBiAs on (311) B GaAs substrates

M Henini, J Ibáñez, M Schmidbauer, M Shafi… - Applied Physics …, 2007 - pubs.aip.org
We report the growth by molecular beam epitaxy of Ga Bi x As 1− x epilayers on (311) B
GaAs substrates. We use high-resolution x-ray diffraction (HRXRD), transmission electron …

Polarized Raman backscattering selection rules for (hhl)-oriented diamond-and zincblende-type crystals

JA Steele, P Puech, RA Lewis - Journal of Applied Physics, 2016 - pubs.aip.org
Due to their interesting orientation-dependent properties, the ability to grow high-index
semiconductor crystals and nanostructures extends the design palette for applications …

External-field effects on the optical spectra of self-assembled InP quantum dots

M Sugisaki, HW Ren, SV Nair, K Nishi, Y Masumoto - Physical review B, 2002 - APS
The effects of external electric and magnetic fields on InP self-assembled quantum dots
(QDs) were investigated by means of single dot spectroscopy. By systematically changing a …

Radiation emission from an asymmetric quantum dot coupled to a plasmonic nanostructure

MA Antón, F Carreño, OG Calderón, S Melle… - Journal of …, 2016 - iopscience.iop.org
We propose a scheme for controlling the absorption and RFS of a quantum dot (QD) with
broken inversion symmetry interacting with a plasmonic nanostructure. The QD is described …

Elastic and piezoelectric fields in substrates GaAs (001) and GaAs (111) due to a buried quantum dot

E Pan - Journal of applied physics, 2002 - pubs.aip.org
The self-assembled quantum dot QD structure possesses certain special electronic and
optical features. 1, 2 While achieving such a QD structure with the desired functionalities is …

Quantum-confined Stark shift in electroreflectance of self-assembled quantum dots

TM Hsu, WH Chang, CC Huang, NT Yeh… - Applied Physics …, 2001 - pubs.aip.org
Electroreflectance was employed to study the electric-field effect on the interband transitions
of InAs quantum dots embedded in an In 0.16 Ga 0.84 As matrix. The electric field caused an …

Germanium self-assembled quantum dots in silicon for nano-and optoelectronics

AI Yakimov, AV Dvurechenskii… - … of Nanoelectronics and …, 2006 - ingentaconnect.com
The scope of this article is to review the formation mechanisms, variety of electronic and
optical phenomena, as well as possible device-oriented applications, in Ge/Si self …

Strong coupling dynamics of driven quantum systems with permanent dipoles

A Burgess, M Florescu, DM Rouse - AVS Quantum Science, 2023 - pubs.aip.org
Many optically active systems possess spatially asymmetric electron orbitals. These
generate permanent dipole moments, which can be stronger than the corresponding …