[HTML][HTML] Elastic and piezoelectric fields due to polyhedral inclusions
BN Kuvshinov - International Journal of Solids and Structures, 2008 - Elsevier
We derive explicit, closed-form expressions describing elastic and piezoelectric
deformations due to polyhedral inclusions in uniform half-space and bi-materials. Our …
deformations due to polyhedral inclusions in uniform half-space and bi-materials. Our …
Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains
The in-plane photoconductivity and photoluminescence are investigated in quantum dot-
chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from …
chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from …
[HTML][HTML] Analysis of quantum-dot-induced strain and electric fields in piezoelectric semiconductors of general anisotropy
Characteristics of the self-organized quantum dots (QDs) such as electron and hole energy
levels and wave functions are dependent to the state of strain and electric field produced …
levels and wave functions are dependent to the state of strain and electric field produced …
Strain distributions in nano-onions with uniform and non-uniform compositions
Nano-onions are ellipsoidal or spherical particles consisting of a core surrounded by
concentric shells of nanometre size. Nano-onions produced by self-assembly and colloidal …
concentric shells of nanometre size. Nano-onions produced by self-assembly and colloidal …
Elastic-energy relaxation in heterostructures with strained nanoinclusions
Elastic-energy relaxation in systems with nanoinclusions is considered. The relaxation is
related to the formation of the following dislocation loops: a single misfit dislocation loop or a …
related to the formation of the following dislocation loops: a single misfit dislocation loop or a …
Compatible composition profiles and critical sizes of alloyed quantum dots
We present first a compatibility equation for the misfit strains induced in alloyed quantum
dots (QDs) by the mismatch in the lattice constants or the thermal-expansion coefficients of …
dots (QDs) by the mismatch in the lattice constants or the thermal-expansion coefficients of …
Critical strain region evaluation of self-assembled semiconductor quantum dots
A novel peak finding method to map the strain from high resolution transmission electron
micrographs, known as the Peak Pairs method, has been applied to In (Ga) As/AlGaAs …
micrographs, known as the Peak Pairs method, has been applied to In (Ga) As/AlGaAs …
Band-edge ultrafast pump–probe spectroscopy of core/shell CdSe/CdS rods: assessing electron delocalization by effective mass calculations
CdSe/CdS dot/rods nanocrystals show interesting physical properties related to the band-
alignment at the hetero-interface, which controls the band-edge electron delocalization over …
alignment at the hetero-interface, which controls the band-edge electron delocalization over …
[HTML][HTML] A general perturbation method for inhomogeneities in anisotropic and piezoelectric solids with applications to quantum-dot nanostructures
By introducing a homogeneous piezoelectric material and its Green's function, we present a
new semi-analytical three-dimensional perturbation method for general inhomogeneity …
new semi-analytical three-dimensional perturbation method for general inhomogeneity …
The strain relaxation of InAs/GaAs self-organized quantum dot
L Yu-Min, Y Zhong-Yuan, R **ao-Min - Chinese Physics B, 2009 - iopscience.iop.org
This paper presents a detailed analysis of the dependence of degree of strain relaxation of
the self-organized InAs/GaAs quantum dot on the geometrical parameters. Differently …
the self-organized InAs/GaAs quantum dot on the geometrical parameters. Differently …