[HTML][HTML] Elastic and piezoelectric fields due to polyhedral inclusions

BN Kuvshinov - International Journal of Solids and Structures, 2008 - Elsevier
We derive explicit, closed-form expressions describing elastic and piezoelectric
deformations due to polyhedral inclusions in uniform half-space and bi-materials. Our …

Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

SV Kondratenko, OV Vakulenko, YI Mazur… - Journal of Applied …, 2014 - pubs.aip.org
The in-plane photoconductivity and photoluminescence are investigated in quantum dot-
chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from …

[HTML][HTML] Analysis of quantum-dot-induced strain and electric fields in piezoelectric semiconductors of general anisotropy

CY Wang, M Denda, E Pan - International Journal of Solids and Structures, 2006 - Elsevier
Characteristics of the self-organized quantum dots (QDs) such as electron and hole energy
levels and wave functions are dependent to the state of strain and electric field produced …

Strain distributions in nano-onions with uniform and non-uniform compositions

HL Duan, BL Karihaloo, J Wang, X Yi - Nanotechnology, 2006 - iopscience.iop.org
Nano-onions are ellipsoidal or spherical particles consisting of a core surrounded by
concentric shells of nanometre size. Nano-onions produced by self-assembly and colloidal …

Elastic-energy relaxation in heterostructures with strained nanoinclusions

AL Kolesnikova, AE Romanov, VV Chaldyshev - Physics of the Solid State, 2007 - Springer
Elastic-energy relaxation in systems with nanoinclusions is considered. The relaxation is
related to the formation of the following dislocation loops: a single misfit dislocation loop or a …

Compatible composition profiles and critical sizes of alloyed quantum dots

HL Duan, BL Karihaloo, J Wang, X Yi - Physical Review B—Condensed Matter …, 2006 - APS
We present first a compatibility equation for the misfit strains induced in alloyed quantum
dots (QDs) by the mismatch in the lattice constants or the thermal-expansion coefficients of …

Critical strain region evaluation of self-assembled semiconductor quantum dots

DL Sales, J Pizarro, PL Galindo, R Garcia… - …, 2007 - iopscience.iop.org
A novel peak finding method to map the strain from high resolution transmission electron
micrographs, known as the Peak Pairs method, has been applied to In (Ga) As/AlGaAs …

Band-edge ultrafast pump–probe spectroscopy of core/shell CdSe/CdS rods: assessing electron delocalization by effective mass calculations

MG Lupo, F Scotognella, M Zavelani-Rossi… - Physical Chemistry …, 2012 - pubs.rsc.org
CdSe/CdS dot/rods nanocrystals show interesting physical properties related to the band-
alignment at the hetero-interface, which controls the band-edge electron delocalization over …

[HTML][HTML] A general perturbation method for inhomogeneities in anisotropic and piezoelectric solids with applications to quantum-dot nanostructures

HJ Chu, E Pan, JJ Ramsey, J Wang, CX Xue - International Journal of …, 2011 - Elsevier
By introducing a homogeneous piezoelectric material and its Green's function, we present a
new semi-analytical three-dimensional perturbation method for general inhomogeneity …

The strain relaxation of InAs/GaAs self-organized quantum dot

L Yu-Min, Y Zhong-Yuan, R **ao-Min - Chinese Physics B, 2009 - iopscience.iop.org
This paper presents a detailed analysis of the dependence of degree of strain relaxation of
the self-organized InAs/GaAs quantum dot on the geometrical parameters. Differently …