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Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength
In this article, the development of mid-UV laser diodes based on the AlGaN materials system
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
[HTML][HTML] Recent progress of electrically pumped AlGaN diode lasers in the UV-B and-C bands
The development of electrically pumped semiconductor diode lasers emitting at the
ultraviolet (UV)-B and-C spectral bands has been an active area of research over the past …
ultraviolet (UV)-B and-C spectral bands has been an active area of research over the past …
Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0. 6Ga0. 4N/AlN/sapphire
K Sato, S Yasue, K Yamada, S Tanaka… - Applied Physics …, 2020 - iopscience.iop.org
An AlGaN ultraviolet-B laser diode at 298 nm was realized at room temperature using pulse
operation. The laser diode has a lattice-relaxed Al 0.6 Ga 0.4 N layer from the underlying …
operation. The laser diode has a lattice-relaxed Al 0.6 Ga 0.4 N layer from the underlying …
Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection
We demonstrated continuous-wave lasing of an AlGaN-based ultraviolet laser diode,
fabricated on a single-crystal AlN substrate when operating at 5 C. The threshold current …
fabricated on a single-crystal AlN substrate when operating at 5 C. The threshold current …
[HTML][HTML] Do** and compensation in heavily Mg doped Al-rich AlGaN films
Record low resistivities of 10 and 30 Ω cm and room-temperature free hole concentrations
as high as 3× 10 18 cm− 3 were achieved in bulk do** of Mg in Al 0.6 Ga 0.4 N films …
as high as 3× 10 18 cm− 3 were achieved in bulk do** of Mg in Al 0.6 Ga 0.4 N films …
Recent development of UV-B laser diodes
This review paper describes the historical development, current issues, and future
expectations of UV-B laser diodes, which are expected to be adopted in various applications …
expectations of UV-B laser diodes, which are expected to be adopted in various applications …
Deep ultraviolet random laser disinfection
Recently, the ineffectiveness of conventional antibiotic treatments against multidrug-resistant
bacteria stimulated the development of novel effective disinfection technologies. Ultraviolet …
bacteria stimulated the development of novel effective disinfection technologies. Ultraviolet …
Low voltage drop AlGaN UV-A laser structures with transparent tunnel junctions and optimized quantum wells
This paper presents the design, material growth and fabrication of AlGaN laser structures
grown by plasma-assisted molecular beam epitaxy. Considering hole transport to be the …
grown by plasma-assisted molecular beam epitaxy. Considering hole transport to be the …
Recent progress on aluminum gallium nitride deep ultraviolet lasers by molecular beam epitaxy
Over the past decades, the aluminum gallium nitride (AlGaN) alloy system has received
wide interest for the development of semiconductor deep ultraviolet (DUV) lasers due to its …
wide interest for the development of semiconductor deep ultraviolet (DUV) lasers due to its …
Stimulated emission mechanism of aluminum nitride
R Ishii, T Nagashima, R Yamamoto, T Hitomi, M Funato… - Physical Review B, 2022 - APS
Photoluminescence and stimulated emission spectroscopies were performed on transparent
aluminum nitride (AlN) substrates grown by hydride vapor-phase epitaxy. The stimulated …
aluminum nitride (AlN) substrates grown by hydride vapor-phase epitaxy. The stimulated …