Emerging 2D Ferroelectric Devices for In‐Sensor and In‐Memory Computing
The quantity of sensor nodes within current computing systems is rapidly increasing in
tandem with the sensing data. The presence of a bottleneck in data transmission between …
tandem with the sensing data. The presence of a bottleneck in data transmission between …
Two-Dimensional Materials for Brain-Inspired Computing Hardware
Recent breakthroughs in brain-inspired computing promise to address a wide range of
problems from security to healthcare. However, the current strategy of implementing artificial …
problems from security to healthcare. However, the current strategy of implementing artificial …
Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor
J Chen, MY Sun, ZH Wang, Z Zhang, K Zhang… - Nano-Micro Letters, 2024 - Springer
Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-
scale manipulation, challenging the conventional limitations of semiconductor materials …
scale manipulation, challenging the conventional limitations of semiconductor materials …
Optoelectronic Reconfigurable Logic Gates Based on Two-Dimensional Vertical Field-Effect Transistors
Z Ma, P Yuan, L Li, X Tang, X Li, S Zhang, L Yu… - Nano Letters, 2024 - ACS Publications
Optoelectronic reconfigurable logic gates are promising candidates to meet the
multifunctional and energy-efficient requirements of integrated circuits. However, complex …
multifunctional and energy-efficient requirements of integrated circuits. However, complex …
Strain engineering of ferroelectric polarization and domain in the two-dimensional multiferroic semiconductor
L Gao, X Chen, J Qi - Applied Physics Letters, 2024 - pubs.aip.org
Two-dimensional (2D) ferroelectricity has attracted great interest for its potential to develop
various flexible and stretchable ultra-thin smart devices. The ultra-thin nature of 2D materials …
various flexible and stretchable ultra-thin smart devices. The ultra-thin nature of 2D materials …
Multiple Polarization States in Hf1−xZrxO2 Thin Films by Ferroelectric and Antiferroelectric Coupling
B Zeng, L Yin, R Liu, C Ju, Q Zhang, Z Yang… - Advanced …, 2024 - Wiley Online Library
HfO2‐based multi‐bit ferroelectric memory combines non‐volatility, speed, and energy
efficiency, rendering it a promising technology for massive data storage and processing …
efficiency, rendering it a promising technology for massive data storage and processing …
2D Memory Enabled by Electrical Stimulation‐Induced Defect Engineering for Complicated Neuromorphic Computing
Defect engineering is extensively utilized in 2D memory devices due to its effectiveness in
enhancing charge‐trap** ability. However, conventional defect modulation techniques …
enhancing charge‐trap** ability. However, conventional defect modulation techniques …
Reconfigurable Sequential-Logic-in-Memory Implementation Utilizing Ferroelectric Field-Effect Transistors
In modern digital systems, sequential logic circuits store and process information over time,
whereas combinational logic circuits process only the current inputs. Conventional …
whereas combinational logic circuits process only the current inputs. Conventional …
Full‐vdW Heterosynaptic Memtransistor with the Ferroelectric Inserted Functional Layer and its Neuromorphic Applications
The emergence of 2D van der Waals (vdW) materials, owing to highly tunable electrical
conductivity, remarkably free stackability, and excellent compatibility for heterojunction …
conductivity, remarkably free stackability, and excellent compatibility for heterojunction …
Develo** fatigue-resistant ferroelectrics using interlayer sliding switching
Ferroelectric materials have switchable electrical polarization that is appealing for high
density non-volatile memories. However, inevitable fatigue hinders practical applications of …
density non-volatile memories. However, inevitable fatigue hinders practical applications of …