Emerging 2D Ferroelectric Devices for In‐Sensor and In‐Memory Computing

C Chen, Y Zhou, L Tong, Y Pang, J Xu - Advanced Materials, 2025 - Wiley Online Library
The quantity of sensor nodes within current computing systems is rapidly increasing in
tandem with the sensing data. The presence of a bottleneck in data transmission between …

Two-Dimensional Materials for Brain-Inspired Computing Hardware

S Hadke, MA Kang, VK Sangwan… - Chemical Reviews, 2025 - ACS Publications
Recent breakthroughs in brain-inspired computing promise to address a wide range of
problems from security to healthcare. However, the current strategy of implementing artificial …

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

J Chen, MY Sun, ZH Wang, Z Zhang, K Zhang… - Nano-Micro Letters, 2024 - Springer
Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-
scale manipulation, challenging the conventional limitations of semiconductor materials …

Optoelectronic Reconfigurable Logic Gates Based on Two-Dimensional Vertical Field-Effect Transistors

Z Ma, P Yuan, L Li, X Tang, X Li, S Zhang, L Yu… - Nano Letters, 2024 - ACS Publications
Optoelectronic reconfigurable logic gates are promising candidates to meet the
multifunctional and energy-efficient requirements of integrated circuits. However, complex …

Strain engineering of ferroelectric polarization and domain in the two-dimensional multiferroic semiconductor

L Gao, X Chen, J Qi - Applied Physics Letters, 2024 - pubs.aip.org
Two-dimensional (2D) ferroelectricity has attracted great interest for its potential to develop
various flexible and stretchable ultra-thin smart devices. The ultra-thin nature of 2D materials …

Multiple Polarization States in Hf1−xZrxO2 Thin Films by Ferroelectric and Antiferroelectric Coupling

B Zeng, L Yin, R Liu, C Ju, Q Zhang, Z Yang… - Advanced …, 2024 - Wiley Online Library
HfO2‐based multi‐bit ferroelectric memory combines non‐volatility, speed, and energy
efficiency, rendering it a promising technology for massive data storage and processing …

2D Memory Enabled by Electrical Stimulation‐Induced Defect Engineering for Complicated Neuromorphic Computing

J Cheng, P Zhang, X Ouyang, W Tang… - Advanced Functional …, 2024 - Wiley Online Library
Defect engineering is extensively utilized in 2D memory devices due to its effectiveness in
enhancing charge‐trap** ability. However, conventional defect modulation techniques …

Reconfigurable Sequential-Logic-in-Memory Implementation Utilizing Ferroelectric Field-Effect Transistors

J Niu, D Kim, J Li, J Lyu, Y Lee, S Lee - ACS nano, 2025 - ACS Publications
In modern digital systems, sequential logic circuits store and process information over time,
whereas combinational logic circuits process only the current inputs. Conventional …

Full‐vdW Heterosynaptic Memtransistor with the Ferroelectric Inserted Functional Layer and its Neuromorphic Applications

Z Shen, A Li, Q Wang, Y Cao, Y Sun… - Advanced Functional …, 2025 - Wiley Online Library
The emergence of 2D van der Waals (vdW) materials, owing to highly tunable electrical
conductivity, remarkably free stackability, and excellent compatibility for heterojunction …

Develo** fatigue-resistant ferroelectrics using interlayer sliding switching

R Bian, R He, E Pan, Z Li, G Cao, P Meng, J Chen… - Science, 2024 - science.org
Ferroelectric materials have switchable electrical polarization that is appealing for high
density non-volatile memories. However, inevitable fatigue hinders practical applications of …