A review of emerging non-volatile memory (NVM) technologies and applications

A Chen - Solid-State Electronics, 2016 - Elsevier
This paper will review emerging non-volatile memory (NVM) technologies, with the focus on
phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM) …

Ultrafast optical spectroscopy of strongly correlated materials and high-temperature superconductors: a non-equilibrium approach

C Giannetti, M Capone, D Fausti, M Fabrizio… - Advances in …, 2016 - Taylor & Francis
In the last two decades non-equilibrium spectroscopies have evolved from avant-garde
studies to crucial tools for expanding our understanding of the physics of strongly correlated …

Spatiotemporal characterization of the field-induced insulator-to-metal transition

J Del Valle, NM Vargas, R Rocco, P Salev, Y Kalcheim… - Science, 2021 - science.org
Many correlated systems feature an insulator-to-metal transition that can be triggered by an
electric field. Although it is known that metallization takes place through filament formation …

Challenges in materials and devices for resistive-switching-based neuromorphic computing

J Del Valle, JG Ramírez, MJ Rozenberg… - Journal of Applied …, 2018 - pubs.aip.org
This tutorial describes challenges and possible avenues for the implementation of the
components of a solid-state system, which emulates a biological brain. The tutorial is …

Mott memory and neuromorphic devices

Y Zhou, S Ramanathan - Proceedings of the IEEE, 2015 - ieeexplore.ieee.org
Orbital occupancy control in correlated oxides allows the realization of new electronic
phases and collective state switching under external stimuli. The resultant structural and …

Nonvolatile memory materials for neuromorphic intelligent machines

DS Jeong, CS Hwang - Advanced Materials, 2018 - Wiley Online Library
Recent progress in deep learning extends the capability of artificial intelligence to various
practical tasks, making the deep neural network (DNN) an extremely versatile hypothesis …

A leaky‐integrate‐and‐fire neuron analog realized with a Mott insulator

P Stoliar, J Tranchant, B Corraze… - Advanced Functional …, 2017 - Wiley Online Library
During the last half century, the tremendous development of computers based on von
Neumann architecture has led to the revolution of the information technology. However, von …

Non-thermal resistive switching in Mott insulator nanowires

Y Kalcheim, A Camjayi, J Del Valle, P Salev… - Nature …, 2020 - nature.com
Resistive switching can be achieved in a Mott insulator by applying current/voltage, which
triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT …

Resistive switching in Mott insulators and correlated systems

E Janod, J Tranchant, B Corraze… - Advanced Functional …, 2015 - Wiley Online Library
Resistive random access memories (ReRAM) form an emerging type of non‐volatile
memories, based on an electrically driven resistive switching (RS) of an active material. This …

Multiferroicity and skyrmions carrying electric polarization in GaV4S8

E Ruff, S Widmann, P Lunkenheimer, V Tsurkan… - Science …, 2015 - science.org
Skyrmions are whirl-like topological spin objects with high potential for future magnetic data
storage. A fundamental question that is relevant to both basic research and application is …