This paper will review emerging non-volatile memory (NVM) technologies, with the focus on
phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM) …

This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …

Issues in the circuitry, integration, and material properties of the two‐dimensional (2D) and
three‐dimensional (3D) crossbar array (CBA)‐type resistance switching memories are …

In the advancement of the semiconductor device technology, ZnO could be a prospective
alternative than the other metal oxides for its versatility and huge applications in different …

The introduction of a SnO2 (110) interlayer remarkably enhances the oxygen evolution
reaction (OER) activity and electrochemical stability of RuO2/Nb-doped TiO2 (110) single …

Various array types of 1‐diode and 1‐resistor stacked crossbar array (1D1R CA) devices
composed of a Schottky diode (SD)(Pt/TiO2/Ti/Pt) and a resistive switching (RS) memory cell …

We have fabricated a Ti/TiO 2/Pt oxide diode with excellent rectifying characteristics by the
asymmetric Schottky barriers at the Ti/TiO 2 (0.13 eV) and the TiO 2/Pt (0.73 eV) interfaces …

Two‐terminal selectors with high nonlinearity, based on bidirectional threshold switching
(TS) behaviors, are considered as a crucial element of crossbar integration for emerging …

This study examined the properties of Schottky-type diodes composed of Pt/TiO 2/Ti, where
the Pt/TiO 2 and TiO 2/Ti junctions correspond to the blocking and ohmic contacts …

Conventional computing architectures are poor suited to the unique workload demands of
deep learning, which has led to a surge in interest in memory-centric computing. Herein, a …