Area-efficient linear regulator with ultra-fast load regulation

P Hazucha, T Karnik, BA Bloechel… - IEEE Journal of solid …, 2005 - ieeexplore.ieee.org
We demonstrate a fully integrated linear regulator for multisupply voltage microprocessors
implemented in a 90 nm CMOS technology. Ultra-fast single-stage load regulation achieves …

Optical I/O technology for tera-scale computing

IA Young, E Mohammed, JTS Liao… - IEEE Journal of solid …, 2009 - ieeexplore.ieee.org
This paper describes both a near term and a long term optical interconnect solution, the first
based on a packaging architecture and the second based on a monolithic photonic CMOS …

A 233-MHz 80%-87% efficient four-phase DC-DC converter utilizing air-core inductors on package

P Hazucha, G Schrom, J Hahn… - IEEE Journal of Solid …, 2005 - ieeexplore.ieee.org
We demonstrate an integrated buck dc-dc converter for multi-V/sub CC/microprocessors. At
nominal conditions, the converter produces a 0.9-V output from a 1.2-V input. The circuit was …

A mm-wave power-harvesting RFID tag in 90 nm CMOS

S Pellerano, J Alvarado… - IEEE Journal of Solid …, 2010 - ieeexplore.ieee.org
A mm-wave power-harvesting RFID tag is implemented in 90 nm CMOS. Operation at mm-
wave reduces antenna size and could allow antenna integration on-chip. This, together with …

A four-antenna receiver in 90-nm CMOS for beamforming and spatial diversity

J Paramesh, R Bishop, K Soumyanath… - IEEE Journal of Solid …, 2005 - ieeexplore.ieee.org
A fully integrated four-channel multi-antenna receiver intended for beamforming and spatial
diversity applications is presented. It can also be used as a low-power area-efficient range …

MIM capacitor integration for mixed-signal/RF applications

CH Ng, CS Ho, SFS Chu, SC Sun - IEEE Transactions on …, 2005 - ieeexplore.ieee.org
The relentless drive toward high-speed and high-density silicon-based integrated circuits
(ICs) has necessitated significant advances in processing technology. The entrance of …

Device and technology evolution for Si-based RF integrated circuits

HS Bennett, R Brederlow, JC Costa… - … on Electron Devices, 2005 - ieeexplore.ieee.org
The relationships between device feature size and device performance figures of merit
(FoMs) are more complex for radio frequency (RF) applications than for digital applications …

A 110 GOPS/W 16-bit multiplier and reconfigurable PLA loop in 90-nm CMOS

SK Hsu, SK Mathew, MA Anders… - IEEE Journal of solid …, 2005 - ieeexplore.ieee.org
This paper describes a 16/spl times/16 bit single-cycle 2's complement multiplier with a
reconfigurable PLA control block fabricated in 90-nm dual-V/sub t/CMOS technology …

A 64 GHz LNA with 15.5 dB gain and 6.5 dB NF in 90 nm CMOS

S Pellerano, Y Palaskas… - IEEE Journal of Solid …, 2008 - ieeexplore.ieee.org
This paper presents an integrated LNA for millimeter-wave applications implemented in 90
nm CMOS technology. Modeling methodology based solely on electromagnetic simulations …

A 6.2-GFlops floating-point multiply-accumulator with conditional normalization

SR Vangal, YV Hoskote, NY Borkar… - IEEE journal of solid …, 2006 - ieeexplore.ieee.org
A pipelined single-precision floating-point multiply-accumulator (FPMAC) featuring a single-
cycle accumulate loop using base 32 and internal carry-save arithmetic with delayed …