This article reviews spintronics based memories, in particular, magnetic random access
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …

The field of spintronics has attracted tremendous attention recently owing to its ability to offer
a solution for the present-day problem of increased power dissipation in electronic circuits …

Spintronics is one of the emerging research fields in nanotechnology and has been growing
very rapidly. Studies of spintronics were started after the discovery of giant …

Magnetically engineered magnetic tunnel junctions (MTJs) show promise as non-volatile
storage cells in high-performance solid-state magnetic random access memories (MRAM) …

The tunnel magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs), is the key to
develo** magnetoresistive random-access-memory (MRAM), magnetic sensors and novel …

This review summarizes recent first-principles investigations of the electronic structure and
magnetism of dilute magnetic semiconductors (DMSs), which are interesting for applications …

The authors observed tunnel magnetoresistance (TMR) ratio of 604% at 300 K in Ta∕ Co
20 Fe 60 B 20∕ Mg O∕ Co 20 Fe 60 B 20∕ Ta pseudo-spin-valve magnetic tunnel junction …

Spintronics is a multidisciplinary field involving physics, chemistry, and engineering, and is a
new research area for solid‐state scientists. A variety of new materials must be found to …

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state
environment plays the determining role. In a more narrow sense spintronics is an emerging …

Magnetoresistance (MR) ratio up to 230% at room temperature (294% at 20 K) has been
observed in spin-valve-type magnetic tunnel junctions (MTJs) using MgO tunnel barrier layer …