(57) ABSTRACT A semiconductor structure can include an active device FET region having
a FET and a photonics region having a photonic device including a waveguide. A …

7, 200, 308 B2 4/2007 Hochberg et al. 7. 339, 724 B2 3/2008 Hochberg et al. 7, 397, 101
B1* 7/2008 Masini..... HO1L 31/028 257/184 7, 424, 192 B2 9/2008 Hochberg et al. 7, 480 …

Primary Examiner—Stephen W Smoot (74) Attorney, Agent, or Firm—Nixon Peabody LLP
(57) ABSTRACT A lateral Ge/Si APD constructed on a silicon-on-insulator wafer includes a …

The present disclosure generally relates to semiconductor detectors for use in
optoelectronic/photonic devices and integrated circuit (IC) chips, and methods for forming …

The present disclosure relates to semiconductor structures and, more particularly, to an
avalanche photodiode and methods of manufacture. The structure includes: a substrate …

(57) ABSTRACT A method includes etching a silicon layer to form a silicon slab and an
upper silicon region over the silicon slab, and implanting the silicon slab and the upper …

The present disclosure relates to semiconductor structures and, more particularly, to
photodiodes and/or PIN diode structures and methods of manufacture. The structure …

The present disclosure relates to semiconductor structures and, more particularly, to
Waveguide absorbers and methods of manufacture are provided. The waveguide structure …

(57) ABSTRACT A photodetector includes a photodetecting region in a semi conductor
substrate, and a reflector extending at least par tially along a sidewall of the photodetecting …

Various embodiments of the present disclosure are directed towards a semiconductor
device. The semiconductor device includes a first doped region having a first do** type …