2D materials enabled next‐generation integrated optoelectronics: from fabrication to applications

Z Cheng, R Cao, K Wei, Y Yao, X Liu, J Kang… - Advanced …, 2021 - Wiley Online Library
Abstract 2D materials, such as graphene, black phosphorous and transition metal
dichalcogenides, have gained persistent attention in the past few years thanks to their …

Graphene: an emerging electronic material

NO Weiss, H Zhou, L Liao, Y Liu, S Jiang… - Advanced …, 2012 - Wiley Online Library
Graphene, a single layer of carbon atoms in a honeycomb lattice, offers a number of
fundamentally superior qualities that make it a promising material for a wide range of …

Honeycomb carbon: a review of graphene

MJ Allen, VC Tung, RB Kaner - Chemical reviews, 2010 - ACS Publications
Graphene is the name given to a two-dimensional sheet of sp2-hybridized carbon. Its
extended honeycomb network is the basic building block of other important allotropes; it can …

Graphene nanomesh

J Bai, X Zhong, S Jiang, Y Huang, X Duan - Nature nanotechnology, 2010 - nature.com
Graphene has significant potential for application in electronics 1, 2, 3, 4, 5, but cannot be
used for effective field-effect transistors operating at room temperature because it is a …

Atomic layer deposition on 2D materials

HG Kim, HBR Lee - Chemistry of Materials, 2017 - ACS Publications
2D materials are layered crystalline materials and are the most attractive nanomaterials due
to their potentials in next-generation electronics. Because most 2D materials are atomically …

Gate-induced insulating state in bilayer graphene devices

JB Oostinga, HB Heersche, X Liu, AF Morpurgo… - Nature materials, 2008 - nature.com
The potential of graphene-based materials consisting of one or a few layers of graphite for
integrated electronics originates from the large room-temperature carrier mobility in these …

Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon<? format?> Field-Effect Transistors

X Wang, Y Ouyang, X Li, H Wang, J Guo, H Dai - Physical review letters, 2008 - APS
Sub-10 nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied
systematically. All sub-10 nm GNRs afforded semiconducting FETs without exception, with I …

Graphene nanomesh by ZnO nanorod photocatalysts

O Akhavan - ACS nano, 2010 - ACS Publications
Local photodegradation of graphene oxide sheets at the tip of ZnO nanorods was used to
achieve semiconducting graphene nanomeshes. The chemically exfoliated graphene oxide …

Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide

WA De Heer, C Berger, M Ruan… - Proceedings of the …, 2011 - National Acad Sciences
After the pioneering investigations into graphene-based electronics at Georgia Tech, great
strides have been made develo** epitaxial graphene on silicon carbide (EG) as a new …

Mobility and saturation velocity in graphene on SiO2

VE Dorgan, MH Bae, E Pop - Applied Physics Letters, 2010 - pubs.aip.org
We examine mobility and saturation velocity in graphene on SiO 2 above room temperature
(300–500 K) and at high fields (∼ 1 V/μ m)⁠. Data are analyzed with practical models …