This paper reviews and compares predictions of the Dutta-Horn model of low-frequency
excess (1/f) noise with experimental results for thin metal films, MOS transistors, and …

The aim of this review paper is to describe the impact of so-called border traps (BTs) in high-
k gate oxides on the operation and reliability of high-mobility channel transistors. First, a …

The increase of consumer electronics and communications applications using Radio
Frequency (RF) and microwave circuits has implications for oscillator design. Applications …

The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the
graphene–metal interface or the contact noise, on the performance of graphene field-effect …

We introduce a front-end application specific integrated circuit (ASIC) for a wire based Time-
Projection-Chamber (TPC) operating in liquid Argon (LAr). The LAr TPC will be used for long …

The low-frequency noise behavior of replacement metal gate high-k/metal-gate MOSFETs
with an equivalent oxide thickness of the SiO 2/HfO 2 bilayer in the range~ 1 nm has been …

Liquid-gated silicon nanowire (NW) field effect transistors (FETs) are fabricated and their
transport and dynamic properties are investigated experimentally and theoretically. Random …

The effects of imperfections on the electrical performance of four-gate field-effect transistors
(G4-FETs) have been studied. Variations in the oxide trap distribution and in the …

The statistical noise analysis of the CMOS image sensors in the dark condition has been
performed with a newly developed 3-D technology computer-aided design framework. The …

Low-frequency noise has been used to study the impact of an Al 2 O 3 work-function-
engineering cap layer on the gate oxide quality of SiO 2/HfO 2 DRAM peripheral n-and …