Charge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides
Ever since two dimensional-transition (2D) metal dichalcogenides (TMDs) were discovered,
their fascinating electronic properties have attracted a great deal of attention for harnessing …
their fascinating electronic properties have attracted a great deal of attention for harnessing …
High performance, self-powered photodetectors based on a graphene/silicon Schottky junction diode
Electron–hole pair separation and photocurrent conversion at two-dimensional (2D) and
three-dimensional (3D) hybrid interfaces are important for achieving high performance, self …
three-dimensional (3D) hybrid interfaces are important for achieving high performance, self …
Role of the potential barrier in the electrical performance of the graphene/SiC interface
In spite of the great expectations for epitaxial graphene (EG) on silicon carbide (SiC) to be
used as a next-generation high-performance component in high-power nano-and micro …
used as a next-generation high-performance component in high-power nano-and micro …
Ultra-low-power photodetector based on a high-photoresponse, plasmonic-effect-induced gateless quasi-freestanding graphene device
Large-area metal-graphene-metal UV–Visible photodetectors fabricated on
quasifreestanding graphene (QFSG)/vicinal SiC (8° off-axis) wafers are applicable to future …
quasifreestanding graphene (QFSG)/vicinal SiC (8° off-axis) wafers are applicable to future …
Modulating Fermi energy in few-layer MoS 2 via metal passivation with enhanced detectivity for near IR photodetector
Atomic layered molybdenum sulfide (MoS2) opens new avenues for healthcare, protective
surveillance and optical communications using rationally developed broadband …
surveillance and optical communications using rationally developed broadband …
Enhancing the photoelectrical performance of graphene/4H-SiC/graphene detector by tuning a Schottky barrier by bias
C Sun, X Chen, R Hong, X Li, X Xu, X Chen… - Applied Physics …, 2020 - pubs.aip.org
Graphene/4H-SiC/graphene photodetectors, as well as graphene/4H-SiC heterojunctions,
have been fabricated and characterized by utilizing a heating decomposition method. High …
have been fabricated and characterized by utilizing a heating decomposition method. High …
[HTML][HTML] Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals
A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon
carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon …
carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon …
Submicron size schottky junctions on as-grown monolayer epitaxial graphene on Ge (100): a low-Invasive scanned-probe-based study
We report on the investigation of the Schottky barrier (SB) formed at the junction between a
metal-free graphene monolayer and Ge semiconductor substrate in the as-grown epitaxial …
metal-free graphene monolayer and Ge semiconductor substrate in the as-grown epitaxial …
Laser-induced interfacial state changes enable tuning of the Schottky-barrier height in SiC
Z Lin, L Ji, Y Wu, L Hu, T Yan, Z Sun - Applied Surface Science, 2019 - Elsevier
We used a 193-nm ArF excimer laser to produce a surface functional layer with a tunable
Schottky barrier height (SBH) on the n-type 4H-SiC surface. The SBHs of the laser-modified …
Schottky barrier height (SBH) on the n-type 4H-SiC surface. The SBHs of the laser-modified …
4H-SiC Ohmic contacts formation by MoS2 layer intercalation: A first-principles study
L Huang, S Pan, X Deng, W Cui - Journal of Applied Physics, 2022 - pubs.aip.org
Due to the difficulty of forming a low Schottky barrier at the interface of a metal/SiC contact,
preparing Ohmic contacts is still a key technical problem in develo** SiC devices. In this …
preparing Ohmic contacts is still a key technical problem in develo** SiC devices. In this …