In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …

This paper reviews the recent progress in germanium (Ge) spintronics on the basis of the
electrical spin injection from ferromagnets (FM), where Ge is a next generation …

Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the
prospect of efficient laser sources monolithically integrated on a Si photonic platform. For …

Layer exchange (LE) is an interesting phenomenon in which metal and semiconductor
layers exchange during heat treatment. A great deal of effort has been put into research on …

The simultaneous control of lattice strain, composition, and microstructure is crucial to
establish high-quality, direct bandgap GeSn semiconductors. Herein, we demonstrate that …

Group IV alloys have attracted interest in the drive to create Si compatible, direct band gap
materials for implementation in complementary metal oxide semiconductor (CMOS) and …

To improve the performance of electronic devices, extensive research efforts have recently
focused on the effect of incorporating Sn into Ge. In the present work, we investigate how Sn …

Strain engineering is a powerful approach in micro-and optoelectronics to enhance carrier
mobility, tune the bandgap of heterostructures, or break lattice symmetry for nonlinear optics …

It is shown that compressively strained Ge1− xSnx/Ge quantum wells (QWs) grown on a Ge
substrate with 0.1≤ x≤ 0.2 and width of 8 nm≤ d≤ 14 nm are a very promising gain …

Germanium-tin (GeSn) is a promising semiconductor material for future optoelectronic
devices operating at the near-infrared to mid-infrared spectral range. In this work, we report …