Transition metal dichalcogenide based magnetoelectric memory device
An apparatus is provided which comprises: a stack com prising a magnetoelectric (ME such
as BiFeO3,(LaBi) FeO3, LuFeO3, PMN-PT, PZT, AIN, SmBiFeO3, Cr2O3, etc.) material and a …
as BiFeO3,(LaBi) FeO3, LuFeO3, PMN-PT, PZT, AIN, SmBiFeO3, Cr2O3, etc.) material and a …
Magnetoelectric spin orbit logic transistor with a spin filter
An apparatus is provided which comprises: a first stack comprising a magnetic insulating
material (MI such as, EuS, EuO, YIG, TmIG, or GaMnAs) and a transition metal …
material (MI such as, EuS, EuO, YIG, TmIG, or GaMnAs) and a transition metal …
Spin orbit memory with multiferroic material
A low power, energy efficient, nonvolatile, high-speed memory apparatus is provided that
can function at extremely low temperatures (eg, less than 30 degree Kelvin). The apparatus …
can function at extremely low temperatures (eg, less than 30 degree Kelvin). The apparatus …
Transition metal dichalcogenide based spin orbit torque memory device
An apparatus is provided which comprises: a stack comprising a magnetic insulating
material (MI such as EuS, EuO, YIG, TmIG, or GaMnAs) and a transition metal …
material (MI such as EuS, EuO, YIG, TmIG, or GaMnAs) and a transition metal …
Valley spin hall effect based non-volatile memory
2023-02-24 Assigned to PURDUE RESEARCH FOUNDATION reassignment PURDUE
RESEARCH FOUNDATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT …
RESEARCH FOUNDATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT …
Magnetic device with gate electrode
2021-06-28 Assigned to KOREA ADVANCED INSTITUTE OF SCIENCE AND
TECHNOLOGY reassignment KOREA ADVANCED INSTITUTE OF SCIENCE AND …
TECHNOLOGY reassignment KOREA ADVANCED INSTITUTE OF SCIENCE AND …
Transition metal dichalcogenide based magnetoelectric memory device
US11696514B2 - Transition metal dichalcogenide based magnetoelectric memory device -
Google Patents US11696514B2 - Transition metal dichalcogenide based magnetoelectric …
Google Patents US11696514B2 - Transition metal dichalcogenide based magnetoelectric …
Magnetic memory device
Y Kato, S Oikawa, H Yoda - US Patent 11,017,826, 2021 - Google Patents
According to one embodiment, a magnetic memory device includes a conductive member, a
first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer. The …
first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer. The …
Transition metal dichalcogenide based spin orbit torque memory device with magnetic insulator
(57) ABSTRACT A memory apparatus is provided which comprises: a stack comprising a
magnetic insulating material and a transition metal dichalcogenide (TMD), wherein the …
magnetic insulating material and a transition metal dichalcogenide (TMD), wherein the …
Apparatus and method for boosting signal in magnetoelectric spin orbit logic
An apparatus is provided to improve spin injection effi ciency from a magnet to a spin orbit
coupling material. The apparatus comprises: a first magnet; a second magnet adja cent to …
coupling material. The apparatus comprises: a first magnet; a second magnet adja cent to …