Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …

A review is given of reported trap states in the bandgaps of different polymorphs of the
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …

β-Ga 2 O 3 based solar-blind photodetectors have strong radiation hardness and great
potential applications in Earth's space environment due to the large bandgap and high bond …

The wide bandgap semiconductors SiC and GaN are commercialized for power electronics
and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials …

The technological and societal impacts of electronic devices based on Ge, Si, and
compound semiconductors like GaAs have been profound, fueling the decades long quest …

The understanding and availability of quantitative measurements of the diffusion of dopants
and impurities in Ga 2 O 3 are currently at an early stage. In this work, we summarize what is …

We present a review of the published experimental and simulation radiation damage results
in Ga 2 O 3. All of the polytypes of Ga 2 O 3 are expected to show similar radiation …

Double polymorph γ/β-Ga2O3 structures remain crystalline upon unprecedentedly high
crystal disorder levels where other semiconductors lose their long-range symmetry and …

Wide bandgap semiconductors such as gallium oxide (Ga2O3) have attracted much
attention for their use in next-generation high-power electronics. Although single-crystal …

Films of α-Ga 2 O 3 (Sn) grown by halide vapor phase epitaxy on sapphire with donor
densities in the range 5× 10 15–8.4× 10 19 cm− 3 were irradiated at 25 C with 1.1 MeV …