The recent advancements in multivalued logic gates represent a rapid paradigm shift in
semiconductor technology toward a new era of hyper Moore's law. Particularly, the …

This article reviews recent developments in nanowire‐based photovoltaics (PV) with an
emphasis on III–V semiconductors including growth mechanisms, device fabrication and …

Recently, negative differential resistance devices have attracted considerable attention due
to their folded current–voltage characteristic, which presents multiple threshold voltage …

Tunnel field-effect transistors (TFETs) rely on quantum-mechanical tunnelling and, unlike
conventional metal–oxide–semiconductor field-effect transistors (MOSFETs), require less …

Abstract Negative‐differential‐resistance (NDR) devices offer a promising pathway for
develo** future computing technologies characterized by exceptionally low energy …

The rediscovery of graphene in 2004 triggered an explosive expansion of research on
various van der Waals (vdW) materials. The atomic layers of these vdW materials do not …

Anti-ambipolar switch (AAS) devices at a narrow bias region are necessary to solve the
intrinsic leakage current problem of ternary logic circuits. In this study, an AAS device with a …

An antiambipolar transistor exhibits a steep increase and decrease in drain current within a
certain range of gate bias voltage. This unique feature is brought about by a partially stacked …

Here we report on the Ga self-catalyzed growth of near full-composition-range energy-gap-
tunable GaAs1–x Sb x nanowires by molecular-beam epitaxy. GaAs1–x Sb x nanowires with …

A figure of merit I 60 is proposed for sub-60 mV/decade devices as the highest current where
the input characteristics exhibit a transition from sub-to super-60 mV/decade behavior. For …