This article reviews recent developments in nanowire‐based photovoltaics (PV) with an
emphasis on III–V semiconductors including growth mechanisms, device fabrication and …

The recent advancements in multivalued logic gates represent a rapid paradigm shift in
semiconductor technology toward a new era of hyper Moore's law. Particularly, the …

Recently, negative differential resistance devices have attracted considerable attention due
to their folded current–voltage characteristic, which presents multiple threshold voltage …

Tunnel field-effect transistors (TFETs) rely on quantum-mechanical tunnelling and, unlike
conventional metal–oxide–semiconductor field-effect transistors (MOSFETs), require less …

An antiambipolar transistor exhibits a steep increase and decrease in drain current within a
certain range of gate bias voltage. This unique feature is brought about by a partially stacked …

Anti-ambipolar switch (AAS) devices at a narrow bias region are necessary to solve the
intrinsic leakage current problem of ternary logic circuits. In this study, an AAS device with a …

A figure of merit I 60 is proposed for sub-60 mV/decade devices as the highest current where
the input characteristics exhibit a transition from sub-to super-60 mV/decade behavior. For …

Here we report on the Ga self-catalyzed growth of near full-composition-range energy-gap-
tunable GaAs1–x Sb x nanowires by molecular-beam epitaxy. GaAs1–x Sb x nanowires with …

We present tunneling field-effect transistors fabricated from InP-GaAs heterostructure
nanowires with an nip do** profile, where the intrinsic InP region is modulated by a top …

III–V antimonide nanowires are among the most interesting semiconductors for transport
physics, nanoelectronics and long-wavelength optoelectronic devices due to their optimal …